Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TK28N65W5,S1FX35 PB-F POWER MOSFET TRANSISTOR |
2719 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 130mOhm @ 13.8A, 10V | 4.5V @ 1.6mA | 90 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C | Through Hole | |
IXTP34N65X2MOSFET N-CH 650V 34A TO220AB |
3777 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 34A (Tc) | 10V | 96mOhm @ 17A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
SIHG30N60E-GE3MOSFET N-CH 600V 29A TO247AC |
2691 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TK065N65Z,S1FMOSFET N-CH 650V 38A TO247 |
3205 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | DTMOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Ta) | 10V | 65mOhm @ 19A, 10V | 4V @ 1.69mA | 62 nC @ 10 V | ±30V | 3650 pF @ 300 V | - | 270W (Tc) | 150°C | Through Hole | |
IXFH220N06T3MOSFET N-CH 60V 220A TO247 |
3612 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiperFET™, TrenchT3™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 220A (Tc) | 10V | 4mOhm @ 100A, 10V | 4V @ 250µA | 136 nC @ 10 V | ±20V | 8500 pF @ 25 V | - | 440W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
SUP85N10-10-GE3MOSFET N-CH 100V 85A TO220AB |
2306 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 85A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 3V @ 250µA | 160 nC @ 10 V | ±20V | 6550 pF @ 25 V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXFH22N50PMOSFET N-CH 500V 22A TO247AD |
3552 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 270mOhm @ 11A, 10V | 5.5V @ 2.5mA | 50 nC @ 10 V | ±30V | 2630 pF @ 25 V | - | 350W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STW7N95K3MOSFET N-CH 950V 7.2A TO247-3 |
3692 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | SuperMESH3™ | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 7.2A (Tc) | 10V | 1.35Ohm @ 3.6A, 10V | 5V @ 100µA | 34 nC @ 10 V | ±30V | 1031 pF @ 100 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
APT37F50BMOSFET N-CH 500V 37A TO247 |
2932 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 37A (Tc) | 10V | 150mOhm @ 18A, 10V | 5V @ 1mA | 145 nC @ 10 V | ±30V | 5710 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTH76N25TMOSFET N-CH 250V 76A TO247 |
3352 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 76A (Tc) | 10V | 39mOhm @ 500mA, 10V | 5V @ 1mA | 92 nC @ 10 V | ±30V | 4500 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STP13N95K3MOSFET N-CH 950V 10A TO220 |
2342 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | SuperMESH3™ | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 10A (Tc) | 10V | 850mOhm @ 5A, 10V | 5V @ 100µA | 51 nC @ 10 V | ±30V | 1620 pF @ 100 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
MSC090SMA070BSICFET N-CH 700V TO247-3 |
2951 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Through Hole | |
IXFP56N30X3MMOSFET N-CH 300V 56A TO220 |
2994 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 56A (Tc) | 10V | 27mOhm @ 28A, 10V | 4.5V @ 1.5mA | 56 nC @ 10 V | ±20V | 3750 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTH96N20PMOSFET N-CH 200V 96A TO247 |
3458 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 96A (Tc) | 10V | 24mOhm @ 500mA, 10V | 5V @ 250µA | 145 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXFH150N17T2MOSFET N-CH 175V 150A TO247AD |
3515 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 175 V | 150A (Tc) | 10V | 12mOhm @ 75A, 10V | 4.5V @ 1mA | 233 nC @ 10 V | ±20V | 14600 pF @ 25 V | - | 880W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
FDPF12N50TMOSFET N-CH 500V 11.5A TO220F |
1000 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | UniFET™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 500 V | 11.5A (Tc) | 10V | 650mOhm @ 6A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 1315 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
MSC060SMA070BSICFET N-CH 700V 39A TO247-3 |
2037 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 39A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.4V @ 1mA | 56 nC @ 20 V | +23V, -10V | 1175 pF @ 700 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
TK49N65W5,S1FX35 PB-F POWER MOSFET TRANSISTOR |
2442 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 49.2A (Ta) | 10V | 57mOhm @ 24.6A, 10V | 4.5V @ 2.5mA | 185 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | 150°C | Through Hole | |
MSC060SMA070SSICFET N-CH 700V 37A D3PAK |
2341 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 37A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.4V @ 1mA | 56 nC @ 20 V | +23V, -10V | 1175 pF @ 700 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
TK39J60W5,S1VQMOSFET N-CH 600V 38.8A TO3P |
2908 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 135 nC @ 10 V | ±30V | 4100 pF @ 300 V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole |