Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXFK66N85XMOSFET N-CH 850V 66A TO264 |
3857 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 66A (Tc) | 10V | 65mOhm @ 500mA, 10V | 5.5V @ 8mA | 230 nC @ 10 V | ±30V | 8900 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
APT94N60L2C3GMOSFET N-CH 600V 94A 264 MAX |
2740 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 94A (Tc) | 10V | 35mOhm @ 60A, 10V | 3.9V @ 5.4mA | 640 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
APT5010JLLU2MOSFET N-CH 500V 41A SOT227 |
2791 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 41A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 96 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
IXFX320N17T2MOSFET N-CH 170V 320A PLUS247-3 |
2791 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 170 V | 320A (Tc) | 10V | 5.2mOhm @ 60A, 10V | 5V @ 8mA | 640 nC @ 10 V | ±20V | 45000 pF @ 25 V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXFK320N17T2MOSFET N-CH 170V 320A TO264AA |
3517 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 170 V | 320A (Tc) | 10V | 5.2mOhm @ 60A, 10V | 5V @ 8mA | 640 nC @ 10 V | ±20V | 45000 pF @ 25 V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXFN64N60PMOSFET N-CH 600V 50A SOT227B |
3228 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 96mOhm @ 500mA, 10V | 5V @ 8mA | 200 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
IXFK64N60Q3MOSFET N-CH 600V 64A TO264AA |
2073 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 64A (Tc) | 10V | 95mOhm @ 32A, 10V | 6.5V @ 4mA | 190 nC @ 10 V | ±30V | 9930 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
GA20JT12-263TRANS SJT 1200V 45A D2PAK |
2726 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 45A (Tc) | - | 60mOhm @ 20A | - | - | - | 3091 pF @ 800 V | - | 282W (Tc) | 175°C (TJ) | Surface Mount | |
MSC015SMA070SSICFET N-CH 700V 126A D3PAK |
2981 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 126A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215 nC @ 20 V | +23V, -10V | 4500 pF @ 700 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
APT10M11LVRGMOSFET N-CH 100V 100A TO264 |
3455 | QRF |
카트에 추가지금 질의 |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 11mOhm @ 50A, 10V | 4V @ 2.5mA | 450 nC @ 10 V | ±30V | 10300 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ||
IXFK400N15X3MOSFET N-CH 150V 400A TO264 |
3374 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 400A (Tc) | 10V | 3mOhm @ 200A, 10V | 4.5V @ 8mA | 365 nC @ 10 V | ±20V | 23700 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
APT8020JLLMOSFET N-CH 800V 33A ISOTOP |
2172 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 33A (Tc) | 10V | 200mOhm @ 16.5A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | ±30V | 5200 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
APT50M65JLLMOSFET N-CH 500V 58A ISOTOP |
2165 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 29A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
IXTB62N50LMOSFET N-CH 500V 62A PLUS264 |
3588 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 62A (Tc) | 20V | 100mOhm @ 31A, 20V | 5.5V @ 250µA | 550 nC @ 20 V | ±30V | 11500 pF @ 25 V | - | 800W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
MSC100SM70JCU2SICFET N-CH 700V 124A SOT227 |
2774 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 124A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215 nC @ 20 V | +25V, -10V | 4500 pF @ 700 V | - | 365W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
MSC100SM70JCU3SICFET N-CH 700V 124A SOT227 |
3708 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 124A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215 nC @ 20 V | +25V, -10V | 4500 pF @ 700 V | - | 365W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
APT50M38JLLMOSFET N-CH 500V 88A ISOTOP |
2529 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 88A (Tc) | 10V | 38mOhm @ 44A, 10V | 5V @ 5mA | 270 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
IXFN70N120SKSICFET N-CH 1200V 68A SOT227B |
2272 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 161 nC @ 20 V | +20V, -5V | 2790 pF @ 1000 V | - | - | -40°C ~ 175°C (TJ) | Chassis Mount | |
APL502LGMOSFET N-CH 500V 58A TO264 |
3134 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 15V | 90mOhm @ 29A, 12V | 4V @ 2.5mA | - | ±30V | 9000 pF @ 25 V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
BSM180C12P3C202SICFET N-CH 1200V 180A MODULE |
3318 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 180A (Tc) | - | - | 5.6V @ 50mA | - | +22V, -4V | 9000 pF @ 10 V | - | 880W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |