Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
RCX220N25MOSFET N-CH 250V 22A TO220FM |
108 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 22A (Tc) | 10V | 140mOhm @ 11A, 10V | 5V @ 1mA | 60 nC @ 10 V | ±30V | 3200 pF @ 25 V | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole | |
FCP7N60MOSFET N-CH 600V 7A TO220-3 |
3403 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 920 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FQP55N10MOSFET N-CH 100V 55A TO220-3 |
794 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Tc) | 10V | 26mOhm @ 27.5A, 10V | 4V @ 250µA | 98 nC @ 10 V | ±25V | 2730 pF @ 25 V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
STF6N90K5MOSFET N-CH 900V 6A TO220FP |
656 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6A (Tc) | 10V | 1.1Ohm @ 3A, 10V | 5V @ 100µA | - | ±30V | - | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STF16NF25MOSFET N-CH 250V 14A TO220FP |
938 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | STripFET™ II | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 235mOhm @ 6.5A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 680 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FDPF12N60NZMOSFET N-CH 600V 12A TO220F |
649 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | UniFET-II™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 650mOhm @ 6A, 10V | 5V @ 250µA | 34 nC @ 10 V | ±30V | 1676 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRF830ALPBFMOSFET N-CH 500V 5A I2PAK |
385 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 10V | 1.4Ohm @ 3A, 10V | 4.5V @ 250µA | 24 nC @ 10 V | ±30V | 620 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TK10A80E,S4XMOSFET N-CH 800V 10A TO220SIS |
3656 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | π-MOSVIII | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 10A (Ta) | 10V | 1Ohm @ 5A, 10V | 4V @ 1mA | 46 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | Through Hole | |
IRFB7537PBFMOSFET N-CH 60V 173A TO220AB |
2748 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 173A (Tc) | 6V, 10V | 3.3mOhm @ 100A, 10V | 3.7V @ 150µA | 210 nC @ 10 V | ±20V | 7020 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
FCP260N60EMOSFET N-CH 600V 15A TO220-3 |
795 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 260mOhm @ 7.5A, 10V | 3.5V @ 250µA | 62 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STFH13N60M2MOSFET N-CH 600V 11A TO220FP |
2131 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±25V | 580 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
R6004JNXC7GMOSFET N-CH 600V 4A TO220FM |
123 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 15V | 1.43Ohm @ 2A, 15V | 7V @ 450µA | 10.5 nC @ 15 V | ±30V | 260 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FCPF11N60FMOSFET N-CH 600V 11A TO220F |
984 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 52 nC @ 10 V | ±30V | 1490 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
R6007ENXMOSFET N-CH 600V 7A TO220FM |
159 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 620mOhm @ 2.4A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole | |
IRFZ44ZLPBFMOSFET N-CH 55V 51A TO262 |
726 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 1420 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
AOTF190A60CLMOSFET N-CH 600V 20A TO220F |
182 | QRF |
카트에 추가지금 질의 |
Tube | aMOS5™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tj) | 10V | 190mOhm @ 7.6A, 10V | 4.6V @ 250µA | 34 nC @ 10 V | ±20V | 1935 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ||
STP11NK40ZFPMOSFET N-CH 400V 9A TO220FP |
510 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 9A (Tc) | 10V | 550mOhm @ 4.5A, 10V | 4.5V @ 100µA | 32 nC @ 10 V | ±30V | 930 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRFI9620GPBFMOSFET P-CH 200V 3A TO220-3 |
203 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 3A (Tc) | 10V | 1.5Ohm @ 1.8A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 340 pF @ 15 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STF18N60M2MOSFET N-CH 600V 13A TO220FP |
2181 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 4V @ 250µA | 21.5 nC @ 10 V | ±25V | 791 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STF15N65M5MOSFET N-CH 650V 11A TO220FP |
554 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 340mOhm @ 5.5A, 10V | 5V @ 250µA | 22 nC @ 10 V | ±25V | 816 pF @ 100 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |