Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF5305PBFMOSFET P-CH 55V 31A TO220AB |
30726 | 1.64 |
카트에 추가지금 질의 |
Datasheet |
Tube | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 31A (Tc) | 10V | 60mOhm @ 16A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IPD031N06L3GATMA1MOSFET N-CH 60V 100A TO252-3 |
8635 | 3.33 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 3.1mOhm @ 100A, 10V | 2.2V @ 93µA | 79 nC @ 4.5 V | ±20V | 13000 pF @ 30 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IPA60R360P7SXKSA1MOSFET N-CH 600V 9A TO220 |
31752 | 1.67 |
카트에 추가지금 질의 |
Datasheet |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13 nC @ 10 V | ±20V | 555 pF @ 400 V | - | 22W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | |
FQP30N06MOSFET N-CH 60V 30A TO220-3 |
1240 | 1.67 |
카트에 추가지금 질의 |
Datasheet |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 40mOhm @ 15A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±25V | 945 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IRFS4620TRLPBFMOSFET N-CH 200V 24A D2PAK |
11313 | 2.85 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 77.5mOhm @ 15A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±20V | 1710 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
STL15N65M5MOSFET N-CH 650V 10A POWERFLAT |
16904 | 3.15 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 375mOhm @ 5A, 10V | 5V @ 250µA | 22 nC @ 10 V | ±25V | 816 pF @ 100 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRF6644TRPBFMOSFET N-CH 100V 10.3A DIRECTFET |
31536 | 3.45 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10.3A (Ta), 60A (Tc) | 10V | 13mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | |
IRFS52N15DTRRPMOSFET N-CH 150V 51A D2PAK |
7480 | 2.93 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 150 V | 51A (Tc) | 10V | 32mOhm @ 36A, 10V | 5V @ 250µA | 89 nC @ 10 V | ±30V | 2770 pF @ 25 V | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IRFD9020PBFMOSFET P-CH 60V 1.6A 4DIP |
5010 | 1.75 |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.6A (Ta) | 10V | 280mOhm @ 960mA, 10V | 4V @ 1µA | 19 nC @ 10 V | ±20V | 570 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | |
FQP19N20CMOSFET N-CH 200V 19A TO220-3 |
1575 | 1.75 |
카트에 추가지금 질의 |
Datasheet |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200 V | 19A (Tc) | 10V | 170mOhm @ 9.5A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1080 pF @ 25 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRL640AMOSFET N-CH 200V 18A TO220-3 |
2728 | 1.76 |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 5V | 180mOhm @ 9A, 5V | 2V @ 250µA | 56 nC @ 5 V | ±20V | 1705 pF @ 25 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRFD110PBFMOSFET N-CH 100V 1A 4DIP |
26466 | 1.77 |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | 10V | 540mOhm @ 600mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | |
EPC8009GANFET N-CH 65V 4A DIE |
14042 | 3.47 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 65 V | 4A (Ta) | 5V | 130mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.45 nC @ 5 V | +6V, -4V | 52 pF @ 32.5 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | |
IRF3205PBFMOSFET N-CH 55V 110A TO220AB |
31119 | 1.79 |
카트에 추가지금 질의 |
Datasheet |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 8mOhm @ 62A, 10V | 4V @ 250µA | 146 nC @ 10 V | ±20V | 3247 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IRF1407STRLPBFMOSFET N-CH 75V 100A D2PAK |
3805 | 3.03 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 10V | 7.8mOhm @ 78A, 10V | 4V @ 250µA | 250 nC @ 10 V | ±20V | 5600 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
PSMN057-200B,118MOSFET N-CH 200V 39A D2PAK |
961 | 3.06 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 39A (Tc) | 10V | 57mOhm @ 17A, 10V | 4V @ 1mA | 96 nC @ 10 V | ±20V | 3750 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
AUIRFR5410TRLMOSFET P-CH 100V 13A DPAK |
20103 | 3.30 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±20V | 760 pF @ 25 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRF2805STRLPBFMOSFET N-CH 55V 135A D2PAK |
4501 | 3.10 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 135A (Tc) | 10V | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 5110 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
FCMT199N60MOSFET N-CH 600V 20.2A POWER88 |
14000 | 3.74 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 199mOhm @ 10A, 10V | 3.5V @ 250µA | 74 nC @ 10 V | ±20V | 2950 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
FQB34P10TMMOSFET P-CH 100V 33.5A D2PAK |
20820 | 3.17 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 33.5A (Tc) | 10V | 60mOhm @ 16.75A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±25V | 2910 pF @ 25 V | - | 3.75W (Ta), 155W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |