Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TN2504N8-GMOSFET N-CH 40V 890MA TO243AA |
32046 | 1.44 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 890mA (Tj) | 5V, 10V | 1Ohm @ 1.5A, 10V | 1.6V @ 1mA | - | ±20V | 125 pF @ 20 V | - | 1.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
SIDR870ADP-T1-GE3MOSFET N-CH 100V 95A PPAK SO-8DC |
16843 | 2.15 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 95A (Tc) | 4.5V, 10V | 6.6mOhm @ 20A, 10V | 3V @ 250µA | 80 nC @ 10 V | ±20V | 2866 pF @ 50 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRLR3636TRPBFMOSFET N-CH 60V 50A DPAK |
11321 | 2.24 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49 nC @ 4.5 V | ±16V | 3779 pF @ 50 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IRF9Z34NPBFMOSFET P-CH 55V 19A TO220AB |
77078 | 1.11 |
카트에 추가지금 질의 |
Datasheet |
Tube | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 620 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IRF9530NPBFMOSFET P-CH 100V 14A TO220AB |
15741 | 1.11 |
카트에 추가지금 질의 |
Datasheet |
Tube | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 200mOhm @ 8.4A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±20V | 760 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
BSC011N03LSATMA1MOSFET N-CH 30V 37A/100A TDSON |
2420 | 2.15 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 37A (Ta), 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | 2.2V @ 250µA | 72 nC @ 10 V | ±20V | 4700 pF @ 15 V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
BSC019N04LSATMA1MOSFET N-CH 40V 27A/100A TDSON |
35305 | 2.26 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 27A (Ta), 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 50A, 10V | 2V @ 250µA | 41 nC @ 10 V | ±20V | 2900 pF @ 20 V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRLR3110ZTRLPBFMOSFET N-CH 100V 42A DPAK |
11989 | 2.26 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 4.5V, 10V | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48 nC @ 4.5 V | ±16V | 3980 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
SI4421DY-T1-E3MOSFET P-CH 20V 10A 8SO |
1799 | 2.20 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 10A (Ta) | 1.8V, 4.5V | 8.75mOhm @ 14A, 4.5V | 800mV @ 850µA | 125 nC @ 4.5 V | ±8V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
STD13N60DM2MOSFET N-CH 600V 11A DPAK |
3955 | 2.08 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 365mOhm @ 5.5A, 10V | 5V @ 250µA | 19 nC @ 10 V | ±25V | 730 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
TN0104N8-GMOSFET N-CH 40V 630MA TO243AA |
2688 | 1.49 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 630mA (Tj) | 3V, 10V | 2Ohm @ 1A, 10V | 1.6V @ 500µA | - | ±20V | 70 pF @ 20 V | - | 1.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IPD042P03L3GATMA1MOSFET P-CH 30V 70A TO252-3 |
4491 | 2.30 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 4.5V, 10V | 4.2mOhm @ 70A, 10V | 2V @ 270µA | 175 nC @ 10 V | ±20V | 12400 pF @ 15 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IRFB7545PBFMOSFET N-CH 60V 95A TO220 |
72814 | 1.14 |
카트에 추가지금 질의 |
Datasheet |
Tube | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 95A (Tc) | 6V, 10V | 5.9mOhm @ 57A, 10V | 3.7V @ 100µA | 110 nC @ 10 V | ±20V | 4010 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IRF530NPBFMOSFET N-CH 100V 17A TO220AB |
16965 | 1.15 |
카트에 추가지금 질의 |
Datasheet |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 10V | 90mOhm @ 9A, 10V | 4V @ 250µA | 37 nC @ 10 V | ±20V | 920 pF @ 25 V | - | 70W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
CSD18534Q5ATMOSFET N-CHANNEL 60V 50A 8VSON |
870 | 1.71 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Ta) | 4.5V, 10V | 9.8mOhm @ 14A, 10V | 2.3V @ 250µA | 11.1 nC @ 4.5 V | ±20V | 1770 pF @ 30 V | - | 3.1W (Ta), 77W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRFH5006TRPBFMOSFET N-CH 60V 21A/100A 8PQFN |
10724 | 2.42 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 21A (Ta), 100A (Tc) | 10V | 4.1mOhm @ 50A, 10V | 4V @ 150µA | 100 nC @ 10 V | ±20V | 4175 pF @ 30 V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
RQ3P300BHTB1NCH 100V 39A, HSMT8, POWER MOSFE |
709 | 2.54 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 39A (Ta) | 6V, 10V | 15.5mOhm @ 10A, 10V | 4V @ 1mA | 36 nC @ 10 V | ±20V | 2040 pF @ 50 V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | |
SI7141DP-T1-GE3MOSFET P-CH 20V 60A PPAK SO-8 |
3254 | 2.43 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 60A (Tc) | 4.5V, 10V | 1.9mOhm @ 25A, 10V | 2.3V @ 250µA | 400 nC @ 10 V | ±20V | 14300 pF @ 10 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
SIR680LDP-T1-RE3MOSFET N-CH 80V 31.8A/130A PPAK |
5325 | 2.45 |
카트에 추가지금 질의 |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 31.8A (Ta), 130A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 2.5V @ 250µA | 135 nC @ 10 V | ±20V | 7250 pF @ 40 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | ||
IPD60R380C6ATMA1MOSFET N-CH 600V 10.6A TO252-3 |
51071 | 2.56 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ C6 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32 nC @ 10 V | ±20V | 700 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |