Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRL2910STRLPBFMOSFET N-CH 100V 55A D2PAK |
2965 | 3.88 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Tc) | 4V, 10V | 26mOhm @ 29A, 10V | 2V @ 250µA | 140 nC @ 5 V | ±16V | 3700 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IRF3415PBFMOSFET N-CH 150V 43A TO220AB |
11254 | 2.44 |
카트에 추가지금 질의 |
Datasheet |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 43A (Tc) | 10V | 42mOhm @ 22A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IRFP150NPBFMOSFET N-CH 100V 42A TO247AC |
15206 | 2.46 |
카트에 추가지금 질의 |
Datasheet |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 10V | 36mOhm @ 23A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
FDB060AN08A0MOSFET N-CH 75V 16A/80A D2PAK |
2950 | 3.97 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 16A (Ta), 80A (Tc) | 6V, 10V | 6mOhm @ 80A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 5150 pF @ 25 V | - | 255W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IPB035N08N3GATMA1MOSFET N-CH 80V 100A D2PAK |
2668 | 4.53 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.5V @ 155µA | 117 nC @ 10 V | ±20V | 8110 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
BSC040N10NS5SCATMA1MOSFET N-CH 100V 140A WSON-8 |
10642 | 4.55 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 6V, 10V | 4mOhm @ 50A, 10V | 3.8V @ 95µA | 72 nC @ 10 V | ±20V | 5300 pF @ 50 V | - | 3W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
BSB056N10NN3GXUMA1MOSFET N-CH 100V 9A/83A 2WDSON |
27102 | 4.46 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9A (Ta), 83A (Tc) | 6V, 10V | 5.6mOhm @ 30A, 10V | 3.5V @ 100µA | 74 nC @ 10 V | ±20V | 5500 pF @ 50 V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | |
AUIRF8736M2TRMOSFET N-CH 40V 27A DIRECTFET |
13601 | 4.81 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 27A (Ta), 137A (Tc) | 10V | 1.9mOhm @ 85A, 10V | 3.9V @ 150µA | 204 nC @ 10 V | ±20V | 6867 pF @ 25 V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IRFB3206PBFMOSFET N-CH 60V 120A TO220AB |
8820 | 2.66 |
카트에 추가지금 질의 |
Datasheet |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6540 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IRF4905PBFMOSFET P-CH 55V 74A TO220AB |
91681 | 2.67 |
카트에 추가지금 질의 |
Datasheet |
Tube | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 74A (Tc) | 10V | 20mOhm @ 38A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
EPC2067TRANS GAN .0015OHM 40V 14LGA |
6738 | 5.10 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | * | Active | N-Channel | GaNFET (Gallium Nitride) | 40 V | 69A (Ta) | 5V | 1.55mOhm @ 37A, 5V | 2.5V @ 18mA | 22.3 nC @ 5 V | +6V, -4V | 3267 pF @ 20 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | |
IXTA08N100D2MOSFET N-CH 1000V 800MA TO263 |
5035 | 2.71 |
카트에 추가지금 질의 |
Datasheet |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 800mA (Tc) | - | 21Ohm @ 400mA, 0V | - | 14.6 nC @ 5 V | ±20V | 325 pF @ 25 V | Depletion Mode | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRF740ASPBFMOSFET N-CH 400V 10A D2PAK |
779 | 2.72 |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1030 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
FDMT80080DCMOSFET N-CH 80V 36A/254A 8DUAL |
9370 | 5.43 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Dual Cool™, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 36A (Ta), 254A (Tc) | 8V, 10V | 1.35mOhm @ 36A, 10V | 4V @ 250µA | 273 nC @ 10 V | ±20V | 20720 pF @ 40 V | - | 3.2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRFS4321TRLPBFMOSFET N-CH 150V 85A D2PAK |
9249 | 4.40 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 85A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 4460 pF @ 25 V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IRFS3207TRLPBFMOSFET N-CH 75V 170A D2PAK |
1480 | 4.44 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 170A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 7600 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IXTY01N100MOSFET N-CH 1000V 100MA TO252AA |
7059 | 2.80 |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 100mA (Tc) | 10V | 80Ohm @ 100mA, 10V | 4.5V @ 25µA | 6.9 nC @ 10 V | ±20V | 54 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRL2505PBFMOSFET N-CH 55V 104A TO220AB |
11333 | 2.80 |
카트에 추가지금 질의 |
Datasheet |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 104A (Tc) | 4V, 10V | 8mOhm @ 54A, 10V | 2V @ 250µA | 130 nC @ 5 V | ±16V | 5000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
FDBL86210-F085MOSFET N-CH 150V 169A 8HPSOF |
466 | 5.38 |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 169A (Tc) | 10V | 6.3mOhm @ 80A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 5805 pF @ 75 V | - | 500W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | |
IRF5210PBFMOSFET P-CH 100V 40A TO220AB |
27227 | 2.87 |
카트에 추가지금 질의 |
Datasheet |
Tube | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 10V | 60mOhm @ 24A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |