Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
C3M0021120KSICFET N-CH 1200V 100A TO247-4L |
5065 | 36.93 |
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Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 15V | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | 162 nC @ 15 V | +15V, -4V | 4818 pF @ 1000 V | - | 469W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | |
C3M0021120DSICFET N-CH 1200V 100A TO247-3 |
2372 | 36.93 |
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Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 15V | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | 160 nC @ 15 V | +15V, -4V | 4818 pF @ 1000 V | - | 469W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | |
C3M0030090KSICFET N-CH 900V 63A TO247-4 |
4934 | 39.38 |
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Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 63A (Tc) | 15V | 39mOhm @ 35A, 15V | 3.5V @ 11mA | 87 nC @ 15 V | +15V, -4V | 1864 pF @ 600 V | - | 149W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTX46N50LMOSFET N-CH 500V 46A PLUS247-3 |
1140 | 45.73 |
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Datasheet |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 20V | 160mOhm @ 500mA, 20V | 6V @ 250µA | 260 nC @ 15 V | ±30V | 7000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
C2M0040120DSICFET N-CH 1200V 60A TO247-3 |
2114 | 45.81 |
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Datasheet |
Tube | Z-FET™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 52mOhm @ 40A, 20V | 2.8V @ 10mA | 115 nC @ 20 V | +25V, -10V | 1893 pF @ 1000 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
C3M0015065DSICFET N-CH 650V 120A TO247-3 |
820 | 45.82 |
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Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 120A (Tc) | 15V | 21mOhm @ 55.8A, 15V | 3.6V @ 15.5mA | 188 nC @ 15 V | +15V, -4V | 5011 pF @ 400 V | - | 416W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | |
SCT3030KLHRC11SICFET N-CH 1200V 72A TO247N |
779 | 80.76 |
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Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 72A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 131 nC @ 18 V | +22V, -4V | 2222 pF @ 800 V | - | 339W | 175°C (TJ) | Through Hole | |
C2M0025120DSICFET N-CH 1200V 90A TO247-3 |
7165 | 81.14 |
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Datasheet |
Tube | Z-FET™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 20V | 34mOhm @ 50A, 20V | 2.4V @ 10mA | 161 nC @ 20 V | +25V, -10V | 2788 pF @ 1000 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
C3M0016120KSICFET N-CH 1.2KV 115A TO247-4 |
584 | 82.06 |
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Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 115A (Tc) | 15V | 22.3mOhm @ 75A, 15V | 3.6V @ 23mA | 211 nC @ 15 V | +15V, -4V | 6085 pF @ 1000 V | - | 556W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | |
C2M0045170PSICFET N-CH 1700V 72A TO247-4 |
2435 | 93.00 |
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Datasheet |
Tube | C2M™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 72A (Tc) | 20V | 59mOhm @ 50A, 20V | 4V @ 18mA | 188 nC @ 20 V | +25V, -10V | 3672 pF @ 1000 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | |
APT60M60JFLLMOSFET N-CH 600V 70A ISOTOP |
248 | 96.63 |
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Datasheet |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 60mOhm @ 35A, 10V | 5V @ 5mA | 289 nC @ 10 V | ±30V | 12630 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
SCT3017ALHRC11SICFET N-CH 650V 118A TO247N |
320 | 131.29 |
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Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 118A (Tc) | 18V | 22.1mOhm @ 47A, 18V | 5.6V @ 23.5mA | 172 nC @ 18 V | +22V, -4V | 2884 pF @ 500 V | - | 427W | 175°C (TJ) | Through Hole | |
FBG20N18BCGAN FET HEMT200V18A COTS 4FSMD-B |
2590 | 313.40 |
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Tray | - | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 18A (Tc) | 5V | 26mOhm @ 18A, 5V | 2.5V @ 3mA | 6 nC @ 5 V | +6V, -4V | 900 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | ||
FBG10N30BCGAN FET HEMT100V30A COTS 4FSMD-B |
2189 | 313.40 |
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Tray | - | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 30A (Tc) | 5V | 9mOhm @ 30A, 5V | 2.5V @ 5mA | 11 nC @ 5 V | +6V, -4V | 1000 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | ||
IXFK210N30X3MOSFET N-CH 300V 210A TO264 |
107 | 33.68 |
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Datasheet |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 210A (Tc) | 10V | 5.5mOhm @ 105A, 10V | 4.5V @ 8mA | 375 nC @ 10 V | ±20V | 24200 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TW070J120B,S1QSICFET N-CH 1200V 36A TO3P |
125 | 33.97 |
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Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 20V | 90mOhm @ 18A, 20V | 5.8V @ 20mA | 67 nC @ 20 V | ±25V, -10V | 1680 pF @ 800 V | Standard | 272W (Tc) | -55°C ~ 175°C | Through Hole | ||
IXFN132N50P3MOSFET N-CH 500V 112A SOT227B |
262 | 38.29 |
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Datasheet |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 112A (Tc) | 10V | 39mOhm @ 66A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 18600 pF @ 25 V | - | 1500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
C3M0015065KSICFET N-CH 650V 120A TO247-4L |
1036 | 45.82 |
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Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 120A (Tc) | 15V | 21mOhm @ 55.8A, 15V | 3.6V @ 15.5mA | 188 nC @ 15 V | +15V, -4V | 5011 pF @ 400 V | - | 416W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | |
SSM3K15ACT,L3FMOSFET N-CH 30V 100MA CST3 |
10779 | 0.36 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | U-MOSIII | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5 pF @ 3 V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | |
BSS84KW-TPMOSFET P-CH 50V 130MA SOT323 |
28282 | 0.36 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 130mA (Tj) | 5V, 10V | 8Ohm @ 100mA, 10V | 2V @ 250µA | - | ±20V | 22 pF @ 5 V | - | 225mW | -55°C ~ 150°C (TJ) | Surface Mount |
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