Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
UJ4C075023K3S750V/23MOHM, SIC, CASCODE, G4, T |
442 | 15.55 |
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Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 66A (Tc) | 12V | 29mOhm @ 40A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 306W (Tc) | -55°C ~ 175°C | Through Hole | |
UJ3C120070K3SSICFET N-CH 1200V 34.5A TO247-3 |
658 | 15.82 |
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Datasheet |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 34.5A (Tc) | 12V | 90mOhm @ 20A, 12V | 6V @ 10mA | 46 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 254.2W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
C3M0065090JSICFET N-CH 900V 35A D2PAK-7 |
8178 | 16.28 |
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Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30 nC @ 15 V | +19V, -8V | 660 pF @ 600 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
NTH4L045N065SC1SILICON CARBIDE MOSFET, NCHANNEL |
192 | 16.52 |
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Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 55A (Tc) | 15V, 18V | 50mOhm @ 25A, 18V | 4.3V @ 8mA | 105 nC @ 18 V | +22V, -8V | 1870 pF @ 325 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
MSC035SMA070B4TRANS SJT N-CH 700V 77A TO247-4 |
116 | 16.57 |
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Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 77A (Tc) | 20V | 44mOhm @ 30A, 20V | 2.7V @ 2mA (Typ) | 99 nC @ 20 V | +23V, -10V | 2010 pF @ 700 V | - | 283W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXTA60N20X4MOSFET ULTRA X4 200V 60A TO-263 |
343 | 11.29 |
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Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 21mOhm @ 30A, 10V | 4.5V @ 250µA | 33 nC @ 10 V | ±20V | 2450 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
C3M0075120JSICFET N-CH 1200V 30A D2PAK-7 |
3648 | 17.72 |
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Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51 nC @ 15 V | +19V, -8V | 1350 pF @ 1000 V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
C3M0075120DSICFET N-CH 1200V 30A TO247-3 |
274 | 17.72 |
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Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 54 nC @ 15 V | +19V, -8V | 1350 pF @ 1000 V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
SCT20N120SICFET N-CH 1200V 20A HIP247 |
151 | 17.89 |
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Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 290mOhm @ 10A, 20V | 3.5V @ 1mA | 45 nC @ 20 V | +25V, -10V | 650 pF @ 400 V | - | 175W (Tc) | -55°C ~ 200°C (TJ) | Through Hole | |
SCT3080KRC14SICFET N-CH 1200V 31A TO247-4L |
563 | 17.95 |
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Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60 nC @ 18 V | +22V, -4V | 785 pF @ 800 V | - | 165W | 175°C (TJ) | Through Hole | |
SIHG018N60E-GE3MOSFET N-CH 600V 99A TO247AC |
918 | 18.03 |
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Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 99A (Tc) | 10V | 23mOhm @ 25A, 10V | 5V @ 250µA | 228 nC @ 10 V | ±30V | 7612 pF @ 100 V | - | 524W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTT11P50MOSFET P-CH 500V 11A TO268 |
2716 | 12.12 |
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Datasheet |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 5V @ 250µA | 130 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IXTT16N50D2MOSFET N-CH 500V 16A TO268 |
101 | 18.37 |
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Datasheet |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 0V | 240mOhm @ 8A, 0V | - | 199 nC @ 5 V | ±20V | 5250 pF @ 25 V | Depletion Mode | 695W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IXFT50N85XHVMOSFET N-CH 850V 50A TO268 |
979 | 19.06 |
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Datasheet |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 50A (Tc) | 10V | 105mOhm @ 500mA, 10V | 5.5V @ 4mA | 152 nC @ 10 V | ±30V | 4480 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
C3M0065100JSICFET N-CH 1000V 35A D2PAK-7 |
4452 | 19.15 |
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Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35 nC @ 15 V | +15V, -4V | 660 pF @ 600 V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
C3M0065100KSICFET N-CH 1000V 35A TO247-4L |
2020 | 19.15 |
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Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35 nC @ 15 V | +19V, -8V | 660 pF @ 600 V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
UF3SC120040B7S1200V/40MOHM, SIC, STACKED FAST |
2773 | 26.83 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 47A (Tc) | 12V | 45mOhm @ 35A, 12V | 6V @ 10mA | 43 nC @ 12 V | ±25V | 1500 pF @ 100 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
TP65H050WSGANFET N-CH 650V 34A TO247-3 |
236 | 19.24 |
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Datasheet |
Tube | - | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 34A (Tc) | 12V | 60mOhm @ 22A, 10V | 4.8V @ 700µA | 24 nC @ 10 V | ±20V | 1000 pF @ 400 V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TP65H035G4WSGANFET N-CH 650V 46.5A TO247-3 |
716 | 19.54 |
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Datasheet |
Tube | - | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 46.5A (Tc) | 10V | 41mOhm @ 30A, 10V | 4.8V @ 1mA | 22 nC @ 0 V | ±20V | 1500 pF @ 400 V | - | 156W (Tc) | -55°C ~ 150°C | Through Hole | |
IXFX160N30TMOSFET N-CH 300V 160A PLUS247-3 |
930 | 19.54 |
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Datasheet |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 160A (Tc) | 10V | 19mOhm @ 60A, 10V | 5V @ 8mA | 335 nC @ 10 V | ±20V | 28000 pF @ 25 V | - | 1390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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