Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXTA32P20TMOSFET P-CH 200V 32A TO263 |
280 | 9.00 |
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Datasheet |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 32A (Tc) | 10V | 130mOhm @ 16A, 10V | 4V @ 250µA | 185 nC @ 10 V | ±15V | 14500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRF300P227MOSFET N-CH 300V 50A TO247AC |
144 | 9.03 |
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Datasheet |
Tube | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 50A (Tc) | 10V | 40mOhm @ 30A, 10V | 4V @ 270µA | 107 nC @ 10 V | ±20V | 4893 pF @ 50 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
C2M0280120DSICFET N-CH 1200V 10A TO247-3 |
42695 | 9.04 |
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Datasheet |
Tube | Z-FET™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 20V | 370mOhm @ 6A, 20V | 2.8V @ 1.25mA (Typ) | 20.4 nC @ 20 V | +25V, -10V | 259 pF @ 1000 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPW60R070CFD7XKSA1MOSFET N-CH 650V 31A TO247-3 |
877 | 9.07 |
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Datasheet |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31A (Tc) | 10V | 70mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67 nC @ 10 V | ±20V | 2721 pF @ 400 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
C2M1000170DSICFET N-CH 1700V 4.9A TO247-3 |
3163 | 9.38 |
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Datasheet |
Tube | Z-FET™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 4.9A (Tc) | 20V | 1.1Ohm @ 2A, 20V | 2.4V @ 100µA | 13 nC @ 20 V | +25V, -10V | 191 pF @ 1000 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
UF3C120080B7SSICFET P-CH 1200V 28.8A D2PAK-7 |
1811 | 13.71 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 28.8A (Tc) | - | 105mOhm @ 20A, 12V | 6V @ 10mA | 23 nC @ 12 V | ±25V | 754 pF @ 100 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
UF3C065040B3MOSFET N-CH 650V 41A TO263 |
800 | 13.71 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | - | 650 V | 41A (Tc) | 12V | 52mOhm @ 30A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
TP65H070LSG-TRGANFET N-CH 650V 25A PQFN88 |
13260 | 13.74 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TP65H070L | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3 nC @ 10 V | ±20V | 600 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IMW120R350M1HXKSA1SICFET N-CH 1.2KV 4.7A TO247-3 |
101 | 9.62 |
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Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 4.7A (Tc) | 15V, 18V | 455mOhm @ 2A, 18V | 5.7V @ 1mA | 5.3 nC @ 18 V | +23V, -7V | 182 pF @ 800 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXFH42N50P2MOSFET N-CH 500V 42A TO247AD |
416 | 9.76 |
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Datasheet |
Tube | HiPerFET™, PolarP2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 42A (Tc) | 10V | 145mOhm @ 500mA, 10V | 4.5V @ 4mA | 92 nC @ 10 V | ±30V | 5300 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXFH12N90PMOSFET N-CH 900V 12A TO247AD |
1069 | 9.95 |
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Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | 6.5V @ 1mA | 56 nC @ 10 V | ±30V | 3080 pF @ 25 V | - | 380W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTP15N50L2MOSFET N-CH 500V 15A TO220AB |
316 | 9.95 |
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Datasheet |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Tc) | 10V | 480mOhm @ 7.5A, 10V | 4.5V @ 250µA | 123 nC @ 10 V | ±20V | 4080 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FCA47N60MOSFET N-CH 600V 47A TO3PN |
571 | 9.96 |
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Datasheet |
Tube | SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 70mOhm @ 23.5A, 10V | 5V @ 250µA | 270 nC @ 10 V | ±30V | 8000 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
C2M1000170JSICFET N-CH 1700V 5.3A D2PAK |
2792 | 9.97 |
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Datasheet |
Bulk | C2M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 5.3A (Tc) | 20V | 1.4Ohm @ 2A, 20V | 3.1V @ 500µA (Typ) | 13 nC @ 20 V | +25V, -10V | 200 pF @ 1000 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
UJ4C075060K3SSICFET N-CH 750V 28A TO247-3 |
6869 | 10.01 |
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Datasheet |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 750 V | 28A (Tc) | - | 74mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1422 pF @ 100 V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
TPH3206PSGANFET N-CH 600V 17A TO220AB |
138 | 10.37 |
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Datasheet |
Tube | - | Not For New Designs | N-Channel | GaNFET (Gallium Nitride) | 600 V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IMW120R220M1HXKSA1SICFET N-CH 1.2KV 13A TO247-3 |
210 | 10.45 |
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Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 13A (Tc) | 15V, 18V | 286mOhm @ 4A, 18V | 5.7V @ 1.6mA | 8.5 nC @ 18 V | +23V, -7V | 289 pF @ 800 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
UJ3C120150K3SSICFET N-CH 1200V 18.4A TO247-3 |
960 | 10.55 |
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Datasheet |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 18.4A (Tc) | 12V | 180mOhm @ 5A, 12V | 5.5V @ 10mA | 30 nC @ 15 V | ±25V | 738 pF @ 100 V | - | 166.7W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXTH30N60PMOSFET N-CH 600V 30A TO247 |
482 | 10.60 |
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Datasheet |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 240mOhm @ 15A, 10V | 5V @ 250µA | 82 nC @ 10 V | ±30V | 5050 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPP60R060C7XKSA1MOSFET N-CH 600V 35A TO220-3 |
347 | 10.87 |
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Datasheet |
Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68 nC @ 10 V | ±20V | 2850 pF @ 400 V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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