Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRFB3077PBFMOSFET N-CH 75V 120A TO220AB |
4916 | 5.43 |
ДобавитьРасследования |
Datasheet |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±20V | 9400 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IRFP22N50APBFMOSFET N-CH 500V 22A TO247-3 |
4196 | 5.73 |
ДобавитьРасследования |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 230mOhm @ 13A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 3450 pF @ 25 V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRFP4227PBFMOSFET N-CH 200V 65A TO247AC |
3825 | 5.25 |
ДобавитьРасследования |
Datasheet |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 65A (Tc) | 10V | 25mOhm @ 46A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 4600 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | |
G2R1000MT17DSIC MOSFET N-CH 4A TO247-3 |
9514 | 5.77 |
ДобавитьРасследования |
Datasheet |
Tube | G2R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 4A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 4V @ 2mA | - | +20V, -5V | 139 pF @ 1000 V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXTA3N100D2MOSFET N-CH 1000V 3A TO263 |
3138 | 5.80 |
ДобавитьРасследования |
Datasheet |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3A (Tc) | - | 5.5Ohm @ 1.5A, 0V | - | 37.5 nC @ 5 V | ±20V | 1020 pF @ 25 V | Depletion Mode | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IPB017N10N5ATMA1MOSFET N-CH 100V 180A TO263-7 |
3217 | 8.65 |
ДобавитьРасследования |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 279µA | 210 nC @ 10 V | ±20V | 15600 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
G3R350MT12JSIC MOSFET N-CH 11A TO263-7 |
6800 | 5.84 |
ДобавитьРасследования |
Datasheet |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 15V | 420mOhm @ 4A, 15V | 2.69V @ 2mA | 12 nC @ 15 V | ±15V | 334 pF @ 800 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
FCPF220N80MOSFET N-CH 800V 23A TO220F |
490 | 6.58 |
ДобавитьРасследования |
Datasheet |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 23A (Tc) | 10V | 220mOhm @ 11.5A, 10V | 4.5V @ 2.3mA | 105 nC @ 10 V | ±20V | 4560 pF @ 100 V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPB60R099CPATMA1MOSFET N-CH 600V 31A TO263-3 |
5962 | 10.75 |
ДобавитьРасследования |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80 nC @ 10 V | ±20V | 2800 pF @ 100 V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
AUIRF4905MOSFET P-CH 55V 74A TO220AB |
4167 | 6.66 |
ДобавитьРасследования |
Datasheet |
Tube | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 74A (Tc) | 10V | 20mOhm @ 38A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXTA26P20PMOSFET P-CH 200V 26A TO263 |
1540 | 6.74 |
ДобавитьРасследования |
Datasheet |
Tube | Polar | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 26A (Tc) | 10V | 170mOhm @ 13A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 2740 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IRFP2907PBFMOSFET N-CH 75V 209A TO247AC |
9506 | 6.79 |
ДобавитьРасследования |
Datasheet |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 209A (Tc) | 10V | 4.5mOhm @ 125A, 10V | 4V @ 250µA | 620 nC @ 10 V | ±20V | 13000 pF @ 25 V | - | 470W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
G2R1000MT17JSIC MOSFET N-CH 3A TO263-7 |
17210 | 6.82 |
ДобавитьРасследования |
Datasheet |
Tube | G2R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 3A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 4V @ 2mA | - | +20V, -10V | 139 pF @ 1000 V | - | 54W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IPP120N08S403AKSA1MOSFET N-CH 80V 120A TO220-3 |
177 | 6.85 |
ДобавитьРасследования |
Datasheet |
Tube | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 223µA | 167 nC @ 10 V | ±20V | 11550 pF @ 25 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
FDP075N15A-F102MOSFET N-CH 150V 130A TO220-3 |
400 | 6.86 |
ДобавитьРасследования |
Datasheet |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 130A (Tc) | 10V | 7.5mOhm @ 100A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 7350 pF @ 75 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXTP76P10TMOSFET P-CH 100V 76A TO220AB |
9338 | 6.90 |
ДобавитьРасследования |
Datasheet |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 76A (Tc) | 10V | 25mOhm @ 38A, 10V | 4V @ 250µA | 197 nC @ 10 V | ±15V | 13700 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTA44P15TMOSFET P-CH 150V 44A TO263 |
1050 | 7.10 |
ДобавитьРасследования |
Datasheet |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 44A (Tc) | 10V | 65mOhm @ 22A, 10V | 4V @ 250µA | 175 nC @ 10 V | ±15V | 13400 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
STP20NK50ZMOSFET N-CH 500V 17A TO220AB |
2609 | 6.52 |
ДобавитьРасследования |
Datasheet |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 17A (Tc) | 10V | 270mOhm @ 8.5A, 10V | 4.5V @ 100µA | 119 nC @ 10 V | ±30V | 2600 pF @ 25 V | - | 190W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | |
IXTP180N10TMOSFET N-CH 100V 180A TO220AB |
780 | 7.22 |
ДобавитьРасследования |
Datasheet |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 6.4mOhm @ 25A, 10V | 4.5V @ 250µA | 151 nC @ 10 V | ±30V | 6900 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IPP051N15N5AKSA1MOSFET N-CH 150V 120A TO220-3 |
975 | 7.46 |
ДобавитьРасследования |
Datasheet |
Tube | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 120A (Tc) | 8V, 10V | 5.1mOhm @ 60A, 10V | 4.6V @ 264µA | 100 nC @ 10 V | ±20V | 7800 pF @ 75 V | - | 500mW (Tc) | -55°C ~ 175°C (TJ) | Through Hole |