Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STY60NM50MOSFET N-CH 500V 60A MAX247 |
319 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 266 nC @ 10 V | ±30V | 7500 pF @ 25 V | - | 560W (Tc) | 150°C (TJ) | Through Hole | |
SUP40012EL-GE3MOSFET N-CH 40V 150A TO220AB |
608 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 4.5V, 10V | 1.79mOhm @ 30A, 10V | 2.5V @ 250µA | 195 nC @ 10 V | ±20V | 10930 pF @ 20 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
STE48NM50MOSFET N-CH 550V 48A ISOTOP |
2476 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 48A (Tc) | 10V | 100mOhm @ 24A, 10V | 5V @ 250µA | 117 nC @ 10 V | ±30V | 3700 pF @ 25 V | - | 450W (Tc) | 150°C (TJ) | Chassis Mount | |
IXTX210P10TMOSFET P-CH 100V 210A PLUS247-3 |
3308 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 210A (Tc) | 10V | 7.5mOhm @ 105A, 10V | 4.5V @ 250µA | 740 nC @ 10 V | ±15V | 69500 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FCPF190N60MOSFET N-CH 600V 20.2A TO220F |
845 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 199mOhm @ 10A, 10V | 3.5V @ 250µA | 74 nC @ 10 V | ±20V | 2950 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXFN82N60PMOSFET N-CH 600V 72A SOT-227B |
3521 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 72A (Tc) | 10V | 75mOhm @ 41A, 10V | 5V @ 8mA | 240 nC @ 10 V | ±30V | 23000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
NTH4L015N065SC1SILICON CARBIDE MOSFET, NCHANNEL |
2348 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 142A (Tc) | 15V, 18V | 18mOhm @ 75A, 18V | 4.3V @ 25mA | 283 nC @ 18 V | +22V, -8V | 4790 pF @ 325 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
SCT3040KLGC11SICFET N-CH 1200V 55A TO247N |
1350 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 262W (Tc) | 175°C (TJ) | Through Hole | |
MSC025SMA120B4TRANS SJT N-CH 1200V 103A TO247 |
2025 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 103A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232 nC @ 20 V | +23V, -10V | 3020 pF @ 1000 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXFZ520N075T2MOSFET N-CH 75V 465A DE475 |
2675 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 465A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 4V @ 8mA | 545 nC @ 10 V | ±20V | 41000 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
SCTW70N120G2VTRANS SJT N-CH 1200V 91A HIP247 |
152 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 91A (Tc) | 18V | 30mOhm @ 50A, 18V | 4.9V @ 1mA | 150 nC @ 18 V | +22V, -10V | 3540 pF @ 800 V | - | 547W (Tc) | -55°C ~ 200°C (TJ) | Through Hole | |
IXFN56N90PMOSFET N-CH 900V 56A SOT-227B |
2783 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 56A (Tc) | 10V | 135mOhm @ 28A, 10V | 6.5V @ 3mA | 375 nC @ 10 V | ±30V | 23000 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
G3R12MT12K1200V 12M TO-247-4 G3R SIC MOSFE |
3772 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 157A (Tc) | 15V, 18V | 13mOhm @ 100A, 18V | 2.7V @ 50mA | 288 nC @ 15 V | +22V, -10V | 9335 pF @ 800 V | - | 567W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
MSC70SM120JCU2SICFET N-CH 1.2KV 89A SOT227 |
2335 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 89A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 395W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
GP2T080A120USIC MOSFET 1200V 80M TO-247-3L |
3046 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | +25V, -10V | 1377 pF @ 1000 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
APT10021JFLLMOSFET N-CH 1000V 37A ISOTOP |
2663 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395 nC @ 10 V | ±30V | 9750 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
MSC130SM120JCU3SICFET N-CH 1.2KV 173A SOT227 |
3996 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 173A (Tc) | 20V | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464 nC @ 20 V | +25V, -10V | 6040 pF @ 1000 V | - | 745W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
MSC130SM120JCU2SICFET N-CH 1.2KV 173A SOT227 |
2379 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 173A (Tc) | 20V | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464 nC @ 20 V | +25V, -10V | 6040 pF @ 1000 V | - | 745W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
APT12040JVRMOSFET N-CH 1200V 26A SOT227 |
2185 | QRF |
카트에 추가지금 질의 |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 26A (Tc) | 10V | 400mOhm @ 13A, 10V | 4V @ 5mA | 1200 nC @ 10 V | ±30V | 18000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ||
IXTX5N250MOSFET N-CH 2500V 5A PLUS247-3 |
2627 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 2500 V | 5A (Tc) | 10V | 8.8Ohm @ 2.5A, 10V | 5V @ 1mA | 200 nC @ 10 V | ±30V | 8560 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |