Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STP30N65M5MOSFET N-CH 650V 22A TO220AB |
6188 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 139mOhm @ 11A, 10V | 5V @ 250µA | 64 nC @ 10 V | ±25V | 2880 pF @ 100 V | - | 140W (Tc) | 150°C (TJ) | Through Hole | |
SIHFPS37N50A-GE3POWER MOSFET SUPER-247, 130 M @ |
3112 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 36A (Tc) | 10V | 130mOhm @ 22A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±30V | 5579 pF @ 25 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STP20NM60FPMOSFET N-CH 600V 20A TO220FP |
153 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 290mOhm @ 10A, 10V | 5V @ 250µA | 54 nC @ 10 V | ±30V | 1500 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | Through Hole | |
STW26NM60NMOSFET N-CH 600V 20A TO247-3 |
462 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±30V | 1800 pF @ 50 V | - | 140W (Tc) | 150°C (TJ) | Through Hole | |
FCA35N60MOSFET N-CH 600V 35A TO3PN |
2974 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | SuperFET™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 98mOhm @ 17.5A, 10V | 5V @ 250µA | 181 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 312.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTH6N50D2MOSFET N-CH 500V 6A TO247 |
2595 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 6A (Tc) | - | 500mOhm @ 3A, 0V | - | 96 nC @ 5 V | ±20V | 2800 pF @ 25 V | Depletion Mode | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
NTMFS5C673NLT1GMOSFET N-CH 60V 5DFN |
3336 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 9.2mOhm @ 25A, 10V | 2V @ 35µA | 9.5 nC @ 10 V | ±20V | 880 pF @ 25 V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IXFH15N100PMOSFET N-CH 1000V 15A TO247AD |
3370 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 15A (Tc) | 10V | 760mOhm @ 500mA, 10V | 6.5V @ 1mA | 97 nC @ 10 V | ±30V | 5140 pF @ 25 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXFH60N60X3MOSFET ULTRA JCT 600V 60A TO247 |
3501 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 51mOhm @ 30A, 10V | 5V @ 4mA | 51 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STW72N60DM2AGMOSFET N-CH 600V 66A TO247 |
436 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | Automotive, AEC-Q101, MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 66A (Tc) | 10V | 42mOhm @ 33A, 10V | 5V @ 250µA | 121 nC @ 10 V | ±25V | 5508 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTA150N15X4MOSFET N-CH 150V 150A TO263AA |
2042 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 150A (Tc) | 10V | 6.9mOhm @ 75A, 10V | 4.5V @ 250µA | 105 nC @ 10 V | ±20V | 5500 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IXFH78N60X3MOSFET ULTRA JCT 600V 78A TO247 |
3133 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 78A | 10V | 38mOhm @ 39A, 10V | 5V @ 4mA | 70 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXFX64N60P3MOSFET N-CH 600V 64A PLUS247-3 |
3049 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 64A (Tc) | 10V | 95mOhm @ 32A, 10V | 5V @ 4mA | 145 nC @ 10 V | ±30V | 9900 pF @ 25 V | - | 1130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXFK88N30PMOSFET N-CH 300V 88A TO264AA |
3826 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 88A (Tc) | 10V | 40mOhm @ 44A, 10V | 5V @ 4mA | 180 nC @ 10 V | ±20V | 6300 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTH30N50L2MOSFET N-CH 500V 30A TO247 |
3255 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 200mOhm @ 15A, 10V | 4.5V @ 250µA | 240 nC @ 10 V | ±20V | 8100 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTH140P10TMOSFET P-CH 100V 140A TO247 |
3723 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 10V | 12mOhm @ 70A, 10V | 4V @ 250µA | 400 nC @ 10 V | ±15V | 31400 pF @ 25 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRFR9214PBFMOSFET P-CH 250V 2.7A DPAK |
3239 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 250 V | 2.7A (Tc) | 10V | 3Ohm @ 1.7A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 220 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
SCT3080ARC14SICFET N-CH 650V 30A TO247-4L |
2047 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 48 nC @ 18 V | +22V, -4V | 571 pF @ 500 V | - | 134W | 175°C (TJ) | Through Hole | |
IXFK64N60PMOSFET N-CH 600V 64A TO264AA |
2584 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 64A (Tc) | 10V | 96mOhm @ 500mA, 10V | 5V @ 8mA | 200 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TP65H035WSGANFET N-CH 650V 46.5A TO247-3 |
2364 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 46.5A (Tc) | 12V | 41mOhm @ 30A, 10V | 4.8V @ 1mA | 36 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |