Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
FCH76N60NFMOSFET N-CH 600V 72.8A TO247-3 |
2154 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Bulk,Tube | SupreMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 72.8A (Tc) | 10V | 38mOhm @ 38A, 10V | 5V @ 250µA | 300 nC @ 10 V | ±30V | 11045 pF @ 100 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IXTX102N65X2MOSFET N-CH 650V 102A PLUS247-3 |
2807 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 102A (Tc) | 10V | 30mOhm @ 51A, 10V | 5V @ 250µA | 152 nC @ 10 V | ±30V | 10900 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
SCTW35N65G2VAGSICFET N-CH 650V 45A HIP247 |
2641 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +22V, -10V | 1370 pF @ 400 V | - | 240W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
![]() |
IXFK94N50P2MOSFET N-CH 500V 94A TO264AA |
3652 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | HiPerFET™, PolarP2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 94A (Tc) | 10V | 55mOhm @ 500mA, 10V | 5V @ 8mA | 220 nC @ 10 V | ±30V | 13700 pF @ 25 V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
APT12060LVRGMOSFET N-CH 1200V 20A TO264 |
2744 | QRF |
카트에 추가지금 질의 |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | 10V | 600mOhm @ 10A, 10V | 4V @ 2.5mA | 650 nC @ 10 V | ±30V | 9500 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
![]() |
SCT2160KEGC111200V, 22A, THD, SILICON-CARBIDE |
3799 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 18V | 208mOhm @ 7A, 18V | 4V @ 2.5mA | 62 nC @ 18 V | +22V, -6V | 1200 pF @ 800 V | - | 165W (Tc) | 175°C (TJ) | Through Hole |
![]() |
IXFT44N50PMOSFET N-CH 500V 44A TO268 |
2762 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 5V @ 4mA | 98 nC @ 10 V | ±30V | 5440 pF @ 25 V | - | 658W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
SCT2160KEHRC111200V, 22A, THD, SILICON-CARBIDE |
2415 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 18V | 208mOhm @ 7A, 18V | 4V @ 2.5mA | 62 nC @ 18 V | +22V, -6V | 1200 pF @ 800 V | - | 165W (Tc) | 175°C (TJ) | Through Hole |
![]() |
SCTW40N120G2VAGSICFET N-CH 1200V 33A HIP247 |
3786 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 33A (Tc) | 18V | 105mOhm @ 20A, 18V | 5V @ 1mA | 63 nC @ 18 V | +22V, -10V | 1230 pF @ 800 V | - | 290W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
![]() |
SCT4026DRC15750V, 26M, 4-PIN THD, TRENCH-STR |
3686 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 56A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 176W | 175°C (TJ) | Through Hole |
![]() |
SCT4026DEC11750V, 26M, 3-PIN THD, TRENCH-STR |
3070 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 56A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 176W | 175°C (TJ) | Through Hole |
![]() |
NVH4L040N120SC1SICFET N-CH 1200V 58A TO247-4 |
2294 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 56mOhm @ 35A, 20V | 4.3V @ 10mA | 106 nC @ 20 V | +25V, -15V | 1762 pF @ 800 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
SCT4036KEC111200V, 36M, 3-PIN THD, TRENCH-ST |
2262 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 43A (Tc) | 18V | 47mOhm @ 21A, 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | +21V, -4V | 2335 pF @ 800 V | - | 176W | 175°C (TJ) | Through Hole |
![]() |
SCT4036KRC151200V, 36M, 4-PIN THD, TRENCH-ST |
2425 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 43A (Tc) | 18V | 47mOhm @ 21A, 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | +21V, -4V | 2335 pF @ 800 V | - | 176W | 175°C (TJ) | Through Hole |
![]() |
APT10078BLLGMOSFET N-CH 1000V 14A TO247 |
3340 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 780mOhm @ 7A, 10V | 5V @ 1mA | 95 nC @ 10 V | ±30V | 2525 pF @ 25 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
SCT4026DEHRC11750V, 56A, 3-PIN THD, TRENCH-STR |
3425 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 56A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 176W | 175°C (TJ) | Through Hole |
![]() |
SCT4026DRHRC15750V, 56A, 4-PIN THD, TRENCH-STR |
3103 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 56A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 176W | 175°C (TJ) | Through Hole |
![]() |
IPW65R075CFD7AXKSA1MOSFET N-CH 650V 32A TO247-3-41 |
3241 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | Automotive, AEC-Q101, CoolMOS™ CFD7A | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 75mOhm @ 16.4A, 10V | 4.5V @ 820µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
![]() |
SCT4036KEHRC111200V, 43A, 3-PIN THD, TRENCH-ST |
2897 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 43A (Tc) | 18V | 47mOhm @ 21A, 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | +21V, -4V | 2335 pF @ 800 V | - | 176W | 175°C (TJ) | Through Hole |
![]() |
SCT4036KRHRC151200V, 43A, 4-PIN THD, TRENCH-ST |
2760 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 43A (Tc) | 18V | 47mOhm @ 21A, 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | +21V, -4V | 2335 pF @ 800 V | - | 176W | 175°C (TJ) | Through Hole |