Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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IXTH80N20LMOSFET N-CH 200V 80A TO247 |
3423 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 80A (Tc) | 10V | 32mOhm @ 40A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 6160 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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GAN063-650WSAQGANFET N-CH 650V 34.5A TO247-3 |
2905 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 34.5A (Ta) | 10V | 60mOhm @ 25A, 10V | 4.5V @ 1mA | 15 nC @ 10 V | ±20V | 1000 pF @ 400 V | - | 143W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
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FCH023N65S3L4MOSFET N-CH 650V 75A TO247 |
2537 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 23mOhm @ 37.5A, 10V | 4.5V @ 7.5mA | 222 nC @ 10 V | ±30V | 7160 pF @ 400 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IMBG120R045M1HXTMA1SICFET N-CH 1.2KV 47A TO263 |
2253 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 47A (Tc) | - | 63mOhm @ 16A, 18V | 5.7V @ 7.5mA | 46 nC @ 18 V | +18V, -15V | 1527 pF @ 800 V | Standard | 227W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IXFH400N075T2MOSFET N-CH 75V 400A TO247AD |
2553 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 400A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 4V @ 250µA | 420 nC @ 10 V | ±20V | 24000 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXFK520N075T2MOSFET N-CH 75V 520A TO264AA |
2006 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 520A (Tc) | 10V | 2.2mOhm @ 100A, 10V | 5V @ 8mA | 545 nC @ 10 V | ±20V | 41000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXTH180N10TMOSFET N-CH 100V 180A TO247 |
264 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 6.4mOhm @ 25A, 10V | 4.5V @ 250µA | 151 nC @ 10 V | ±30V | 6900 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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UJ4C075023K4S750V/23MOHM, SIC, CASCODE, G4, T |
2369 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 66A (Tc) | 12V | 29mOhm @ 40A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPT60R040S7XTMA1MOSFET N-CH 600V 13A 8HSOF |
3829 | QRF |
카트에 추가지금 질의 |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™S7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 790µA | 83 nC @ 12 V | ±20V | 3127 pF @ 300 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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IXTH16N20D2MOSFET N-CH 200V 16A TO247 |
2035 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 16A (Tc) | - | 73mOhm @ 8A, 0V | - | 208 nC @ 5 V | ±20V | 5500 pF @ 25 V | Depletion Mode | 695W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPP023NE7N3GXKSA1MOSFET N-CH 75V 120A TO220-3 |
2692 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Bulk,Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 273µA | 206 nC @ 10 V | ±20V | 14400 pF @ 37.5 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXFX120N25PMOSFET N-CH 250V 120A PLUS247-3 |
3351 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 5V @ 4mA | 185 nC @ 10 V | ±20V | 8000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXFH180N20X3MOSFET N-CH 200V 180A TO247 |
2683 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 180A (Tc) | 10V | 7.5mOhm @ 90A, 10V | 4.5V @ 4mA | 154 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFH98N60X3MOSFET ULTRA JCT 600V 98A TO247 |
3359 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 98A (Tc) | 10V | 30mOhm @ 49A, 10V | 5V @ 4mA | 90 nC @ 10 V | ±20V | 6250 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT106N60B2C6MOSFET N-CH 600V 106A T-MAX |
2325 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 106A (Tc) | 10V | 35mOhm @ 53A, 10V | 3.5V @ 3.4mA | 308 nC @ 10 V | ±20V | 8390 pF @ 25 V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT10090BLLGMOSFET N-CH 1000V 12A TO247 |
2748 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | 10V | 950mOhm @ 6A, 10V | 5V @ 1mA | 71 nC @ 10 V | ±30V | 1969 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFH50N85XMOSFET N-CH 850V 50A TO247 |
3660 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 50A (Tc) | 10V | 105mOhm @ 500mA, 10V | 5.5V @ 4mA | 152 nC @ 10 V | ±30V | 4480 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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C3M0075120KSICFET N-CH 1200V 30A TO247-4L |
2058 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51 nC @ 15 V | +19V, -8V | 1350 pF @ 1000 V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AIMW120R060M1HXKSA11200V COOLSIC MOSFET PG-TO247-3 |
3311 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | Automotive, AEC-Q101, CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.7V @ 5.6mA | 31 nC @ 18 V | +23V, -7V | 1060 pF @ 800 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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GAN041-650WSBQGAN041-650WSB/SOT429/TO-247 |
2381 | QRF |
카트에 추가지금 질의 |
![]() Datasheet |
Tube | - | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 47.2A | 10V | 41mOhm @ 32A, 10V | 4.5V @ 1mA | 22 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 187W | -55°C ~ 175°C (TJ) | Through Hole |