Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IPA65R225C7IPA65R225 - 650V AND 700V COOLMO |
1360 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
FDMC7570SPOWER FIELD-EFFECT TRANSISTOR, 2 |
4336 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 27A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 27A, 10V | 3V @ 1mA | 68 nC @ 10 V | ±20V | 4410 pF @ 13 V | - | 2.3W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
UPA2792GR(0)-E1-AZSWITCHING N AND P TRANSISTORS |
10000 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | - | Not For New Designs | - | - | - | 10A (Tj) | - | - | - | - | - | - | - | - | - | - | |
FQI27N25TUMOSFET N-CH 250V 25.5A I2PAK |
600 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 25.5A (Tc) | 10V | 110mOhm @ 12.75A, 10V | 5V @ 250µA | 65 nC @ 10 V | ±30V | 2450 pF @ 25 V | - | 3.13W (Ta), 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FDP39N20POWER FIELD-EFFECT TRANSISTOR, 3 |
500 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 39A (Tc) | 10V | 66mOhm @ 19.5A, 10V | 5V @ 250µA | 49 nC @ 10 V | ±30V | 2130 pF @ 25 V | - | 251W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
BUK6C3R3-75C,118NEXPERIA BUK6C3R3 - N-CHANNEL TR |
480 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 181A (Tc) | 10V | 3.4mOhm @ 90A, 10V | 2.8V @ 1mA | 253 nC @ 10 V | ±16V | 15800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IRFB3256PBFIRFB3256 - 12V-300V N-CHANNEL PO |
244 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 3.4mOhm @ 75A, 10V | 4V @ 150µA | 195 nC @ 10 V | ±20V | 6600 pF @ 48 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
AUIRFB8405-071AUIRFB8405 - 20V-40V N-CHANNEL A |
2050 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
IRFSL7537PBFMOSFET N-CH 60V 173A TO262 |
800 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 173A (Tc) | 6V, 10V | 3.3mOhm @ 100A, 10V | 3.7V @ 150µA | 210 nC @ 10 V | ±20V | 7020 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
AUIRF1405ZLMOSFET N-CH 55V 150A TO262 |
1832 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 150A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 4780 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
HUF75344P375A, 55V, 0.008 OHM, N-CHANNEL U |
1425 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 20 V | ±20V | 3200 pF @ 25 V | - | 285W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
FDA16N50-F109POWER FIELD-EFFECT TRANSISTOR, 1 |
270 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16.5A (Tc) | 10V | 380mOhm @ 8.3A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1945 pF @ 25 V | - | 205W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
2SK2933-E2SK2933 - N-CHANNEL POWER MOSFET |
261 | QRF |
카트에 추가지금 질의 |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Ta) | 4V, 10V | 52mOhm @ 8A, 10V | 2.5V @ 1mA | - | ±20V | 500 pF @ 10 V | - | 25W (Ta) | 150°C | Through Hole | ||
AUIRL1404ZLMOSFET N-CH 40V 160A TO262 |
2236 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
NP80N04KHE-E1-AZNP80N04KHE-E1-AZ - SWITCHINGN-CH |
800 | QRF |
카트에 추가지금 질의 |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 8mOhm @ 40A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 3300 pF @ 25 V | - | 1.8W (Ta), 120W (Tc) | 175°C | Surface Mount | ||
FDZ375PMOSFET P-CH 20V 3.7A 4WLCSP |
4885 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.7A (Ta) | 1.5V, 4.5V | 78mOhm @ 2A, 4.5V | 1.2V @ 250µA | 15 nC @ 4.5 V | ±8V | 865 pF @ 10 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
PSMN4R3-80PS,127NEXPERIA PSMN4R3-80PS - 120A, 80 |
6706 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 4.3mOhm @ 25A, 10V | 4V @ 1mA | 111 nC @ 10 V | ±20V | 8161 pF @ 40 V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
FCP165N65S3R0FCP165N65S3R0 - POWER MOSFET, N- |
2115 | QRF |
카트에 추가지금 질의 |
Bulk | SuperFET® III | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 19A (Tc) | 10V | 165mOhm @ 9.5A, 10V | 4.5V @ 440mA | 39 nC @ 10 V | ±30V | 1500 pF @ 400 V | - | 154W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ||
2SB817D2SB817 - P-CHANNEL SILICON MOSFE |
1357 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
AUIRL1404ZSAUIRL1404ZS - 20V-40V N-CHANNEL |
1000 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |