Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXTA230N075T2MOSFET N-CH 75V 230A TO263 |
150 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 230A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 4V @ 250µA | 178 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IXTQ110N10PMOSFET N-CH 100V 110A TO3P |
3427 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 15mOhm @ 500mA, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 3550 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
FQL50N40MOSFET N-CH 400V 50A TO264-3 |
338 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 50A (Tc) | 10V | 75mOhm @ 25A, 10V | 5V @ 250µA | 210 nC @ 10 V | ±30V | 7500 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTK102N30PMOSFET N-CH 300V 102A TO264 |
2165 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 102A (Tc) | 10V | 33mOhm @ 500mA, 10V | 5V @ 500µA | 224 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IMW65R057M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
2038 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 35A (Tc) | 18V | 74mOhm @ 16.7A, 18V | 5.7V @ 5mA | 28 nC @ 18 V | +20V, -2V | 930 pF @ 400 V | - | 133W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
APT6025BVRGMOSFET N-CH 600V 25A TO247 |
3243 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | - | 250mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | - | 5160 pF @ 25 V | - | - | - | Through Hole | |
NTE454MOSFET-DUAL GATE N-CH |
3380 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 60mA | - | - | - | - | - | 3300 pF @ 15 V | Standard | 1.2W | -65°C ~ 175°C (TJ) | Through Hole | |
2N6760TXV5.5A, 400V, 1OHM, N-CHANNEL |
471 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 5.5A (Tc) | 10V | 1Ohm @ 3.5A, 10V | 4V @ 1mA | - | ±20V | 800 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTH44P15TMOSFET P-CH 150V 44A TO247 |
3128 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 44A (Tc) | 10V | 65mOhm @ 500mA, 10V | 4V @ 250µA | 175 nC @ 10 V | ±15V | 13400 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IMZA65R057M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
3723 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 35A (Tc) | 18V | 74mOhm @ 16.7A, 18V | 5.7V @ 5mA | 28 nC @ 18 V | +20V, -2V | 930 pF @ 400 V | - | 133W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
2SK2371-AN-CHANNEL POWER MOSFET |
302 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
2SK1285-AZN-CHANNEL POWER MOSFET |
700 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
TW048N65C,S1FG3 650V SIC-MOSFET TO-247 48MOH |
2174 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 40A (Tc) | 18V | 65mOhm @ 20A, 18V | 5V @ 1.6mA | 41 nC @ 18 V | +25V, -10V | 1362 pF @ 400 V | - | 132W (Tc) | 175°C | Through Hole | |
NTE464MOSFET-P CHANNEL AMP/SW |
3957 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bag | - | Active | P-Channel | MOSFET (Metal Oxide) | 25 V | 10A | 10V | 600Ohm @ 0A, 10V | 5V @ 10A | - | ±30V | 5000 pF @ 10 V | Standard | 800mW (Tc) | 175°C (TJ) | Through Hole | |
IRF362N-CHANNEL HERMETIC MOS HEXFET |
160 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
APT38F80B2MOSFET N-CH 800V 41A T-MAX |
2446 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 41A (Tc) | 10V | 240mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8070 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTH60N20L2MOSFET N-CH 200V 60A TO247 |
3261 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4.5V @ 250µA | 255 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FDH50N50MOSFET N-CH 500V 48A TO247-3 |
761 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | UniFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 48A (Tc) | 10V | 105mOhm @ 24A, 10V | 5V @ 250µA | 137 nC @ 10 V | ±30V | 6460 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
4AM14P-CHANNEL POWER MOSFET |
202 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
IXFR44N80PMOSFET N-CH 800V 25A ISOPLUS247 |
2481 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 25A (Tc) | 10V | 200mOhm @ 22A, 10V | 5V @ 8mA | 200 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |