Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IV1Q12160T4SIC MOSFET, 1200V 160MOHM, TO-24 |
111 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 195mOhm @ 10A, 20V | 2.9V @ 1.9mA | 43 nC @ 20 V | +20V, -5V | 885 pF @ 800 V | - | 138W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IPT65R033G7XTMA1MOSFET N-CH 650V 69A 8HSOF |
911 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ C7 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 69A (Tc) | 10V | 33mOhm @ 28.9A, 10V | 4V @ 1.44mA | 110 nC @ 10 V | ±20V | 5000 pF @ 400 V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
UJ4SC075018B7S750V/18MOHM, N-OFF SIC STACK CAS |
200 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | SiCFET (Silicon Carbide) | 750 V | 72A (Tc) | 12V | 23mOhm @ 50A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1414 pF @ 400 V | - | 259W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
GPIHV30DFNGANFET N-CH 1200V 30A DFN8X8 |
112 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | GaNFET (Gallium Nitride) | 1200 V | 30A | 6V | - | 1.4V @ 3.5mA | 8.25 nC @ 6 V | +7.5V, -12V | 236 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | |
GPI65060DFNGANFET N-CH 650V 60A DFN8X8 |
120 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 60A | 6V | - | 1.2V @ 3.5mA | 16 nC @ 6 V | +7.5V, -12V | 420 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | |
UJ4SC075011B7S750V/11MOHM, N-OFF SIC STACK CAS |
197 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | SiCFET (Silicon Carbide) | 750 V | 104A (Tc) | 12V | 14.2mOhm @ 60A, 12V | 5.5V @ 10mA | 75 nC @ 15 V | ±20V | 3245 pF @ 400 V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
LH7A400N0G000B5LH7A400 - 32-BIT SYSTEM-ON-CHIP |
9310 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
AFT18HW355SR5RF N-CHANNEL POWER MOSFET |
3161 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
SCT3040KRC14SICFET N-CH 1200V 55A TO247-4L |
212 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 262W | 175°C (TJ) | Through Hole | |
SCT3040KLHRC11SICFET N-CH 1200V 55A TO247N |
206 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Ta) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 262W | 175°C (TJ) | Through Hole | |
SCT3030KLGC11SICFET N-CH 1200V 72A TO247N |
161 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 72A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 131 nC @ 18 V | +22V, -4V | 2222 pF @ 800 V | - | 339W (Tc) | 175°C (TJ) | Through Hole | |
IRLML2402TRPBFMOSFET N-CH 20V 1.2A SOT23 |
1781 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.2A (Ta) | 2.7V, 4.5V | 250mOhm @ 930mA, 4.5V | 700mV @ 250µA (Min) | 3.9 nC @ 4.5 V | ±12V | 110 pF @ 15 V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
BUK98150-55A/CUFMOSFET N-CH 55V 5.5A SOT223 |
250 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 5.5A (Tc) | 4.5V, 10V | 137mOhm @ 5A, 10V | 2V @ 1mA | 5.3 nC @ 5 V | ±15V | 320 pF @ 25 V | - | 8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
NTF6P02T3GMOSFET P-CH 20V 10A SOT223 |
15134 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 10A (Ta) | 2.5V, 4.5V | 50mOhm @ 6A, 4.5V | 1V @ 250µA | 20 nC @ 4.5 V | ±8V | 1200 pF @ 16 V | - | 8.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
FDB14N30TMMOSFET N-CH 300V 14A D2PAK |
10310 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | UniFET™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 300 V | 14A (Tc) | 10V | 290mOhm @ 7A, 10V | 5V @ 250µA | 25 nC @ 10 V | ±30V | 1060 pF @ 25 V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRL540NPBFMOSFET N-CH 100V 36A TO220AB |
13421 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 36A (Tc) | 4V, 10V | 44mOhm @ 18A, 10V | 2V @ 250µA | 74 nC @ 5 V | ±16V | 1800 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IRFD9120PBFMOSFET P-CH 100V 1A 4DIP |
547 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | 10V | 600mOhm @ 600mA, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | |
IRF5210STRLPBFMOSFET P-CH 100V 38A D2PAK |
3633 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 2780 pF @ 25 V | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
FQP27P06MOSFET P-CH 60V 27A TO220-3 |
3170 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 27A (Tc) | 10V | 70mOhm @ 13.5A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±25V | 1400 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
PSMN2R8-40PS,127MOSFET N-CH 40V 100A TO220AB |
2711 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 2.8mOhm @ 10A, 10V | 4V @ 1mA | 71 nC @ 10 V | ±20V | 4491 pF @ 20 V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |