Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DMP58D0LFB-7MOSFET P-CH 50V 180MA 3DFN |
27700 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 50 V | 180mA (Ta) | 2.5V, 5V | 8Ohm @ 100mA, 5V | 2.1V @ 250µA | - | ±20V | 27 pF @ 25 V | - | 470mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
ZXMN2069FTAMOSFET N-CH SOT23-3 |
3000 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | - | 1.4A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | |
BSD314SPEH6327XTSA1MOSFET P-CH 30V 1.5A SOT363-6 |
14814 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 4.5V, 10V | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9 nC @ 10 V | ±20V | 294 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
NTR4501NST1GMOSFET N-CH 20V 3.2A SOT23 |
24520 | QRF |
카트에 추가지금 질의 |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Obsolete | - | - | - | 3.2A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | ||
ES6U1T2RMOSFET P-CH 12V 1.3A 6WEMT |
8330 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 1.3A (Ta) | 1.5V, 4.5V | 260mOhm @ 1.3A, 4.5V | 1V @ 1mA | 2.4 nC @ 4.5 V | ±10V | 290 pF @ 6 V | Schottky Diode (Isolated) | 700mW (Ta) | 150°C (TJ) | Surface Mount | |
C2M0160120DSICFET N-CH 1200V 19A TO247-3 |
500 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | Z-FET™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 19A (Tc) | 20V | 196mOhm @ 10A, 20V | 2.5V @ 500µA | 32.6 nC @ 20 V | +25V, -10V | 527 pF @ 800 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TW083N65C,S1FG3 650V SIC-MOSFET TO-247 83MOH |
175 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 30A (Tc) | 18V | 113mOhm @ 15A, 18V | 5V @ 600µA | 28 nC @ 18 V | +25V, -10V | 873 pF @ 400 V | - | 111W (Tc) | 175°C | Through Hole | |
NTHL050N65S3HFMOSFET N-CH 650V 58A TO247-3 |
896 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | FRFET®, SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 50mOhm @ 29A, 10V | 5V @ 1.7mA | 125 nC @ 10 V | ±30V | 5017 pF @ 400 V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IMZA65R083M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
2928 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 26A (Tc) | 18V | 111mOhm @ 11.2A, 18V | 5.7V @ 3.3mA | 19 nC @ 18 V | +20V, -2V | 624 pF @ 400 V | - | 104W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
UF4C120070K3S1200V/70MOHM, SIC, FAST CASCODE |
585 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 27.5A (Tc) | - | 91mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1370 pF @ 800 V | - | 217W (Tc) | -55°C ~ 175°C (TJ) | ||
NVH4L040N65S3FMOSFET N-CH 650V 65A TO247-4 |
445 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | Automotive, AEC-Q101, SuperFET® III, FRFET® | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | - | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 160 nC @ 10 V | ±30V | 5665 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
NTE2920MOSFET N-CHANNEL 60V 70A TO3P |
363 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 70A (Tc) | 10V | 14mOhm @ 54A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXFH70N65X3MOSFET 70A 650V X3 TO247 |
351 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 10V | 44mOhm @ 35A, 10V | 5.2V @ 4mA | 66 nC @ 10 V | ±20V | 4600 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FDA2712MOSFET N-CH 250V 64A TO3PN |
2332 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 64A (Tc) | 10V | 34mOhm @ 40A, 10V | 5V @ 250µA | 129 nC @ 10 V | ±30V | 10175 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
UF4C120070K4S1200V/70MOHM, SIC, FAST CASCODE |
240 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 27.5A (Tc) | - | 91mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1370 pF @ 800 V | - | 217W (Tc) | -55°C ~ 175°C (TJ) | ||
NTE2393MOSFET N-CHANNEL 500V 10A TO3P |
108 | QRF |
카트에 추가지금 질의 |
Datasheet |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 670mOhm @ 5A, 10V | 4V @ 1mA | - | ±20V | - | - | 125W (Tc) | 150°C (TJ) | Through Hole | |
TP65H050G4WS650 V 34 A GAN FET |
218 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | SuperGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 34A (Tc) | 10V | 60mOhm @ 22A, 10V | 4.8V @ 700µA | 24 nC @ 10 V | ±20V | 1000 pF @ 400 V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
NTH4L060N065SC1SIC MOS TO247-4L 650V |
450 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 47A (Tc) | 15V, 18V | 70mOhm @ 20A, 18V | 4.3V @ 6.5mA | 74 nC @ 18 V | +22V, -8V | 1473 pF @ 325 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
R6576KNZ4C13650V 76A TO-247, HIGH-SPEED SWIT |
504 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 46mOhm @ 44.4A, 10V | 5V @ 2.96mA | 165 nC @ 10 V | ±20V | 7400 pF @ 25 V | - | 735W (Tc) | 150°C (TJ) | Through Hole | |
UF4C120053K3S1200V/53MOHM, SIC, FAST CASCODE |
571 | QRF |
카트에 추가지금 질의 |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 34A (Tc) | 12V | 67mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1370 pF @ 800 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) |