Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | Wavelength | Color-Enhanced | SpectralRange | DiodeType | Responsivity@nm | ResponseTime | Voltage-DCReverse(Vr)(Max) | Current-Dark(Typ) | ActiveArea | ViewingAngle | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
200-11-31-241SENSOR PHOTODIODE 660NM TO8 |
2066 | 144.44 |
카트에 추가지금 질의 |
Bulk | - | Active | 660nm | Red | 350nm ~ 1100nm | PIN | 0.55 A/W @ 900nm | 8ns | 75 V | 50nA | 20.27mm² | 95° | -40°C ~ 125°C | Through Hole | ||
C30618BFCHINGAAS PIN, 350UM, TO-18 WITH FC |
2409 | 171.76 |
카트에 추가지금 질의 |
Datasheet |
Box | C30618 | Active | 1300nm, 1550nm | - | 800nm ~ 1700nm | PIN | 0.9 A/W @ 1300nm, 0.95 A/W @ 1550nm | 500ps | 80 V | 1nA | 350µm Dia | - | -40°C ~ 125°C | Through Hole | |
172-11-31-221SENSOR PHOTODIODE 660NM TO5 |
3849 | 166.73 |
카트에 추가지금 질의 |
Bulk | - | Active | 660nm | Red | 350nm ~ 1100nm | PIN | 0.55 A/W @ 900nm | 8ns | 75 V | 35nA | 15.04mm² | 79° | -40°C ~ 125°C | Through Hole | ||
PDB-C216SENSOR PHOTODIODE 950NM ARRAY |
2016 | 176.23 |
카트에 추가지금 질의 |
Datasheet |
Bulk | - | Active | 950nm | Blue | 350nm ~ 1100nm | - | - | 13ns | 50 V | 5nA | 2.24mm² (x16) | - | -20°C ~ 75°C | Through Hole | |
PDB-V110SENSOR PHOTODIODE 950NM RADIAL |
2534 | 188.56 |
카트에 추가지금 질의 |
Bulk | - | Active | 950nm | Blue | 350nm ~ 1100nm | PIN | 0.17 A/W @ 450nm | 13ns | 75 V | 200pA | 93.54mm² | 120° | -40°C ~ 60°C | Through Hole | ||
C30739ECERH-2SI APD SHORT WAVELENGTH ENHANCED |
2623 | 245.00 |
카트에 추가지금 질의 |
Datasheet |
Box | C30739ECERH | Active | 430nm | - | 400nm ~ 700nm | Avalanche | 52 A/W @ 430nm | 2ns | 450 V | 2nA | 5.6mm² | - | 0°C ~ 50°C | Through Hole | |
UVG12PHOTODIODE UV 4.1MM |
3513 | 222.27 |
카트에 추가지금 질의 |
Datasheet |
Tray | UVG | Active | - | - | - | - | 0.115 A/W @ 254nm | 4µs | - | - | 13.2mm² | 45° | -20°C ~ 80°C | Through Hole | |
060-11-41-211PHOTODETECTOR INGAAS 1.5MM TO-39 |
3696 | 215.58 |
카트에 추가지금 질의 |
Bulk | - | Active | - | - | 800nm ~ 1700nm | - | 0.92 A/W @ 1310nm | 10ns | 75 V | 10nA | 1.325mm² | 113° | -40°C ~ 85°C | Through Hole | ||
C30902SHSI APD, 0.5MM, LOW NOISE/PHOTON |
3939 | 270.15 |
카트에 추가지금 질의 |
Datasheet |
Box | C30902 | Active | 830nm | - | 400nm ~ 1000nm | Avalanche | 128 A/W @ 830nm | 500ps | 225 V | 15nA | 0.2mm² | - | -40°C ~ 70°C | Through Hole | |
C30902SH-2SI APD, 0.5MM, LOW NOISE/PHOTON |
2608 | 288.99 |
카트에 추가지금 질의 |
Datasheet |
Box | C30902 | Active | 900nm | - | 400nm ~ 1000nm | Avalanche | 108 A/W @ 900nm | 500ps | 225 V | 15nA | 0.2mm² | - | -40°C ~ 70°C | Through Hole | |
UVG5SPHOTODIODE UV W/WINDOW 5MM2 |
3222 | 324.04 |
카트에 추가지금 질의 |
Datasheet |
Tray | UVG | Active | - | - | 250nm ~ 1100nm | - | 0.115 A/W @ 254nm | 1µs | - | 1nA | 5mm² | 45° | -20°C ~ 80°C | Through Hole | |
SXUVPS4CQUADRANT PHOTODIODE 5MM 254NM |
2287 | 364.65 |
카트에 추가지금 질의 |
Datasheet |
Box | SXUV | Active | - | - | - | - | 0.02 A/W @ 254nm | 1µs | 20 V | 1nA | 1.25mm² (x4) | - | -10°C ~ 40°C | Through Hole | |
C30742-33-050-T1SENSOR PHOTODIODE TO8 12 LEADS |
3767 | 368.55 |
카트에 추가지금 질의 |
Datasheet |
Bulk | C30742-33 | Active | - | - | 350nm ~ 850nm | - | - | 300ps | 95 V | 700nA | 3mm² H x 3mm² W | - | - | Through Hole | |
C30950EHSI APD RECEIVER, 0.8MM, TO-8, 50 |
3976 | 386.92 |
카트에 추가지금 질의 |
Datasheet |
Box | C30950 | Active | 900nm | - | 400nm ~ 1100nm | Avalanche | 560 KV/W @ 900nm | 10ns | 425 V | - | 0.5mm² | 130° | -40°C ~ 70°C | Through Hole | |
C30665GHINGAAS PIN, 3MM, TO-5, GLASS WIN |
2577 | 433.95 |
카트에 추가지금 질의 |
Datasheet |
Box | C30665 | Active | 850nm, 1300nm, 1550nm | - | 800nm ~ 1700nm | PIN | 0.2 A/W @ 850nm, 0.9 A/W @ 1300nm, 0.95 A/W @ 1550nm | - | 50 V | 25nA | 3mm Dia | - | -40°C ~ 85°C | Through Hole | |
KPDE300-H53-BINGAAS PHOTODIODE 3000UM 900-17 |
2957 | 377.56 |
카트에 추가지금 질의 |
Bag | - | Active | - | - | 900nm ~ 1700nm | - | 0.9 A/W @ 1310nm, 1 A/W @ 1550nm | - | 2 V | 2nA | 3.00mm Dia | - | -20°C ~ 70°C | Through Hole | ||
KPDEA005-56F-BINGAAS APD 55UM 900-1700NM |
3056 | 405.37 |
카트에 추가지금 질의 |
Bag | - | Active | - | - | 900nm ~ 1700nm | Avalanche | 0.95 A/W @ 1310nm, 1.05 A/W @ 1550nm | - | 55 V | 10nA | 0.06mm Dia | - | -40°C ~ 85°C | Through Hole | ||
KPDEA005B-56F-BINGAAS APD 50UM 900-1700NM |
2408 | 405.37 |
카트에 추가지금 질의 |
Datasheet |
Bag | - | Active | - | - | 900nm ~ 1700nm | Avalanche | 0.95 A/W @ 1310nm, 1.05 A/W @ 1550nm | - | 55 V | 20nA | 50µm Dia | - | -40°C ~ 85°C | Through Hole | |
C30662ECERHINGAAS APD, 200UM, CERAMIC SUBMO |
2871 | 474.55 |
카트에 추가지금 질의 |
Datasheet |
Box | C30662 | Active | 1550nm | - | 1100nm ~ 1700nm | Avalanche | 9.3 A/W @ 1550nm | - | 70 V | 150nA | 200µm | - | -20°C ~ 70°C | Surface Mount | |
444-12-12-171SENSOR PHOTODIODE 660NM |
3134 | 423.59 |
카트에 추가지금 질의 |
Bulk | - | Active | 660nm | Blue | 350nm ~ 1100nm | PIN | 0.28 A/W @ 450nm | 13ns | 75 V | 13nA | 99.93mm² | 95° | -40°C ~ 125°C | Chassis Mount |