Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TK040N65Z,S1FMOSFET N-CH 650V 57A TO247 |
133 | 10.73 |
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Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 57A (Ta) | 10V | 40mOhm @ 28.5A, 10V | 4V @ 2.85mA | 105 nC @ 10 V | ±30V | 6250 pF @ 300 V | - | 360W (Tc) | 150°C | Through Hole | |
IXFH50N60P3MOSFET N-CH 600V 50A TO247AD |
1587 | 10.78 |
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Datasheet |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 145mOhm @ 500mA, 10V | 5V @ 4mA | 94 nC @ 10 V | ±30V | 6300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
APT18M100SMOSFET N-CH 1000V 18A D3PAK |
183 | 10.97 |
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Datasheet |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 18A (Tc) | 10V | 700mOhm @ 9A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4845 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
APT1204R7BFLLGMOSFET N-CH 1200V 3.5A TO247 |
106 | 11.08 |
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Datasheet |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 3.5A (Tc) | 10V | 4.7Ohm @ 1.75A, 10V | 5V @ 1mA | 31 nC @ 10 V | ±30V | 715 pF @ 25 V | - | 135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IMZ120R350M1HXKSA1SICFET N-CH 1.2KV 4.7A TO247-4 |
234 | 11.18 |
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Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 4.7A (Tc) | 15V, 18V | 350mOhm @ 2A, 18V | 5.7V @ 1mA | 5.3 nC @ 18 V | +23V, -7V | 182 pF @ 800 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXTQ69N30PMOSFET N-CH 300V 69A TO3P |
260 | 11.22 |
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Datasheet |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 69A (Tc) | 10V | 49mOhm @ 500mA, 10V | 5V @ 250µA | 180 nC @ 10 V | ±20V | 4960 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TPH3206PDGANFET N-CH 600V 17A TO220AB |
130 | 11.26 |
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Datasheet |
Tube | - | Not For New Designs | N-Channel | GaNFET (Gallium Nitride) | 600 V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
R6030JNZ4C13MOSFET N-CH 600V 30A TO247G |
568 | 11.49 |
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Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 15V | 143mOhm @ 15A, 15V | 7V @ 5.5mA | 74 nC @ 15 V | ±30V | 2500 pF @ 100 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPP410N30NAKSA1MOSFET N-CH 300V 44A TO220-3 |
292 | 11.53 |
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Datasheet |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 44A (Tc) | 10V | 41mOhm @ 44A, 10V | 4V @ 270µA | 87 nC @ 10 V | ±20V | 7180 pF @ 100 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
SIHG039N60E-GE3MOSFET N-CH 600V 63A TO247AC |
406 | 11.67 |
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Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 63A (Tc) | 10V | 39mOhm @ 32A, 10V | 5V @ 250µA | 126 nC @ 10 V | ±30V | 4369 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTT440N04T4HVMOSFET N-CH 40V 440A TO268 |
120 | 11.80 |
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Datasheet |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 440A (Tc) | 10V | 1.25mOhm @ 100A, 10V | 4V @ 250µA | 480 nC @ 10 V | ±15V | 26000 pF @ 25 V | - | 940W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
FCH47N60NFMOSFET N-CH 600V 45.8A TO247-3 |
3374 | 11.83 |
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Datasheet |
Tube | SupreMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 45.8A (Tc) | 10V | 65mOhm @ 23.5A, 10V | 4V @ 250µA | 157 nC @ 10 V | ±30V | 6120 pF @ 100 V | - | 368W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPP65R115CFD7AAKSA1MOSFET N-CH 650V 21A TO220-3 |
432 | 7.57 |
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Datasheet |
Tube | Automotive, AEC-Q101, CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 115mOhm @ 9.7A, 10V | 4.5V @ 490µA | 41 nC @ 10 V | ±20V | 1950 pF @ 400 V | - | 114W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | |
TK49N65W,S1FPB-F POWER MOSFET TRANSISTOR TO2 |
113 | 11.99 |
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Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 49.2A (Ta) | 10V | 55mOhm @ 24.6A, 10V | 3.5V @ 2.5mA | 160 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | 150°C | Through Hole | |
NVHL040N65S3FMOSFET N-CH 650V 65A TO247-3 |
2529 | 12.03 |
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Datasheet |
Tube | Automotive, AEC-Q101, SuperFET® III, FRFET® | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 153 nC @ 10 V | ±30V | 5875 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
FCA47N60-F109MOSFET N-CH 600V 47A TO3PN |
1782 | 10.12 |
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Datasheet |
Tube,Tube | SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 70mOhm @ 23.5A, 10V | 5V @ 250µA | 270 nC @ 10 V | ±30V | 8000 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPW60R090CFD7XKSA1MOSFET N-CH 600V 25A TO247-3 |
119 | 7.90 |
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Datasheet |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 90mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51 nC @ 10 V | ±20V | 2103 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
STW57N65M5MOSFET N-CH 650V 42A TO247 |
511 | 13.08 |
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Datasheet |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±25V | 4200 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | Through Hole | |
NVHL160N120SC1SICFET N-CH 1200V 17A TO247-3 |
2849 | 13.37 |
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Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 20V | 224mOhm @ 12A, 20V | 4.3V @ 2.5mA | 34 nC @ 20 V | +25V, -15V | 665 pF @ 800 V | - | 119W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXFH100N30X3MOSFET N-CH 300V 100A TO247 |
118 | 13.44 |
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Datasheet |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 100A (Tc) | 10V | 13.5mOhm @ 50A, 10V | 4.5V @ 4mA | 122 nC @ 10 V | ±20V | 7660 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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