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Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Photo Mfr. Part # Stock Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SIDC06D60F6X1SA2

SIDC06D60F6X1SA2

DIODE SWITCHING 600V WAFER

Infineon Technologies

2356 QRF
- +

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SIDC06D60F6X1SA2

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 15A (DC) -40°C ~ 175°C 1.6 V @ 15 A
MUR4L40HA0G

MUR4L40HA0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation

2689 QRF
- +

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MUR4L40HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
SIDC06D60E6X1SA1

SIDC06D60E6X1SA1

DIODE SWITCHING 600V WAFER

Infineon Technologies

2378 QRF
- +

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SIDC06D60E6X1SA1

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 10A (DC) -55°C ~ 150°C 1.25 V @ 10 A
MUR4L60 A0G

MUR4L60 A0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation

3821 QRF
- +

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MUR4L60 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A -55°C ~ 175°C 1.28 V @ 4 A
SIDC14D60E6X1SA4

SIDC14D60E6X1SA4

DIODE SWITCHING 600V WAFER

Infineon Technologies

3974 QRF
- +

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SIDC14D60E6X1SA4

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 30A (DC) -55°C ~ 150°C 1.25 V @ 30 A
MUR4L60HA0G

MUR4L60HA0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation

2404 QRF
- +

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MUR4L60HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A -55°C ~ 175°C 1.28 V @ 4 A
SIDC09D60E6X1SA3

SIDC09D60E6X1SA3

DIODE SWITCHING 600V WAFER

Infineon Technologies

2100 QRF
- +

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SIDC09D60E6X1SA3

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 150 ns 27 µA @ 600 V 600 V 20A (DC) -55°C ~ 150°C 1.7 V @ 20 A
P2500M A0G

P2500M A0G

DIODE GEN PURP 1000V 25A P2500

Taiwan Semiconductor Corporation

3288 QRF
- +

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P2500M A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 5 µA @ 1000 V - 25A -50°C ~ 175°C 870 mV @ 5 A
SIDC14D60E6X1SA3

SIDC14D60E6X1SA3

DIODE SWITCHING 600V WAFER

Infineon Technologies

2138 QRF
- +

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SIDC14D60E6X1SA3

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 30A (DC) -55°C ~ 150°C 1.25 V @ 30 A
P2500MHA0G

P2500MHA0G

DIODE GEN PURP 25A P2500

Taiwan Semiconductor Corporation

2829 QRF
- +

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P2500MHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 5 µA @ 1000 V - 25A -50°C ~ 175°C 870 mV @ 5 A
SIDC06D60E6X1SA4

SIDC06D60E6X1SA4

DIODE SWITCHING 600V WAFER

Infineon Technologies

3729 QRF
- +

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SIDC06D60E6X1SA4

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 10A (DC) -55°C ~ 150°C 1.25 V @ 10 A
SF21G A0G

SF21G A0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation

2160 QRF
- +

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SF21G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 950 mV @ 2 A
SIDC02D60C8X7SA2

SIDC02D60C8X7SA2

DIODE SWITCHING 600V 6A WAFER

Infineon Technologies

3611 QRF
- +

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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 6A (DC) -40°C ~ 175°C 1.95 V @ 6 A
SF21GHA0G

SF21GHA0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation

3575 QRF
- +

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SF21GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 950 mV @ 2 A
SIDC09D60F6X1SA5

SIDC09D60F6X1SA5

DIODE SWITCHING 600V WAFER

Infineon Technologies

3043 QRF
- +

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SIDC09D60F6X1SA5

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 30A (DC) -40°C ~ 175°C 1.6 V @ 30 A
SF22G A0G

SF22G A0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

2491 QRF
- +

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SF22G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 950 mV @ 2 A
SIDC04D60F6X1SA2

SIDC04D60F6X1SA2

DIODE SWITCHING 600V WAFER

Infineon Technologies

3327 QRF
- +

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SIDC04D60F6X1SA2

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 9A (DC) -40°C ~ 175°C 1.6 V @ 9 A
SF22GHA0G

SF22GHA0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

3159 QRF
- +

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SF22GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 950 mV @ 2 A
SIDC14D60C8X1SA3

SIDC14D60C8X1SA3

DIODE GEN PURP 600V 50A WAFER

Infineon Technologies

3817 QRF
- +

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SIDC14D60C8X1SA3

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 50A (DC) -40°C ~ 175°C 1.9 V @ 50 A
SF23G A0G

SF23G A0G

DIODE GEN PURP 150V 2A DO204AC

Taiwan Semiconductor Corporation

3607 QRF
- +

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SF23G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 2A -55°C ~ 150°C 950 mV @ 2 A
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  • EA-CHIP INDUSTRY CO., LIMITED