Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
G3S06508BSIC SCHOTTKY DIODE 650V 8A 3-PIN |
3870 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 14A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
G3S06512BSIC SCHOTTKY DIODE 650V 12A 3-PI |
2132 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 27A (DC) | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
G3S12004BSIC SCHOTTKY DIODE 1200V 4A 3-PI |
3052 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 8.5A (DC) | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
G3S06510BSIC SCHOTTKY DIODE 650V 10A 3-PI |
2864 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 27A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
AS3D020120P21200V,20A SILICON CARBIDE SCHOTT |
3162 | QRF |
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Datasheet |
Tube | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 30A (DC) | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
DPAD10 TO-72 4LLOW LEAKAGE, MONOLITHIC DUAL, PI |
3994 | QRF |
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Datasheet |
Bulk | DPAD | Active | 2 Independent | Standard | 45 V | 50mA | 1.5 V @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 pA @ 20 V | -55°C ~ 150°C | Through Hole | |
G4S06516BTSIC SCHOTTKY DIODE 650V 16A 3-PI |
3219 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 25.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
DPAD50 TO-72 4LLOW LEAKAGE, MONOLITHIC DUAL, PI |
2735 | QRF |
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Datasheet |
Bulk | DPAD | Active | 2 Independent | Standard | 45 V | 50mA | 1.5 V @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 50 pA @ 20 V | -55°C ~ 150°C | Through Hole | |
G3S12006BSIC SCHOTTKY DIODE 1200V 6A 3-PI |
2610 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 14A (DC) | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
G3S06516BSIC SCHOTTKY DIODE 650V 16A 3-PI |
3394 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 25.5A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
G4S06520BTSIC SCHOTTKY DIODE 650V 20A 3-PI |
3140 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 31.2A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
AS3D040120P21200V,40A SILICON CARBIDE SCHOTT |
3518 | QRF |
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Datasheet |
Tube | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 52A (DC) | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
G5S12016BSIC SCHOTTKY DIODE 1200V 16A 3-P |
2171 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
G5S12010BMSIC SCHOTTKY DIODE 1200V 10A 3-P |
2302 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 19.35A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
G5S12016BMSIC SCHOTTKY DIODE 1200V 16A 3-P |
2995 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
G3S12010BMSIC SCHOTTKY DIODE 1200V 10A 3-P |
2069 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 19.8A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
G3S12010BSIC SCHOTTKY DIODE 1200V 10A 3-P |
3360 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 39A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
G4S06530BTSIC SCHOTTKY DIODE 650V 30A 3-PI |
2591 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 39A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
G5S12020BMSIC SCHOTTKY DIODE 1200V 20A 3-P |
2878 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
G3S12020BSIC SCHOTTKY DIODE 1200V 20A 3-P |
2614 | QRF |
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Datasheet |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 37A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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